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Wafer-Scale Fabrication of Ultrathin Flexible Electronic Systems via Capillary-Assisted Electrochemical Delamination

机译:通过毛细管辅助电化学分层的超薄柔性电子系统的晶圆级制备

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摘要

Electronic systems on ultrathin polymer films are generally processed with rigid supporting substrates during fabrication, followed by delamination and transfer to the targeted working areas. The challenge associated with an efficient and innocuous delamination operation is one of the major hurdles toward high-performance ultrathin flexible electronics at large scale. Herein, a facile, rapid, damage-free approach is reported for detachment of wafer-scale ultrathin electronic foils from Si wafers by capillary-assisted electrochemical delamination (CAED). Anodic etching and capillary action drive an electrolyte solution to penetrate and split the polymer/Si interface, leading to complete peel-off of the electronic foil with a 100% success rate. The delamination speed can be controlled by the applied voltage and salt concentration, reaching a maximum value of 1.66 mm s(-1) at 20 V using 2 m NaCl solution. Such a process incurs neither mechanical damage nor chemical contamination; therefore, the delaminated electronic systems remain intact, as demonstrated by high-performance carbon nanotube (CNT)-based thin-film transistors and integrated circuits constructed on a 5.5 cm x 5.0 cm parylene-based film with 4 mu m thickness. Furthermore, the CAED strategy can be applied for prevalent polymer films and confers great flexibility and capability for designing and manufacturing diverse ultrathin electronic systems.
机译:超薄聚合物薄膜上的电子系统通常在制造过程中使用刚性支撑基板进行处理,然后分层并转移到目标工作区域。高效且无害的分层操作所带来的挑战是大规模生产高性能超薄柔性电子产品的主要障碍之一。本文中,据报道通过毛细管辅助电化学分层(CAED)从Si晶片上分离晶片级超薄电子箔的简便,快速,无损伤的方法。阳极蚀刻和毛细管作用驱动电解质溶液渗透并分裂聚合物/ Si界面,从而以100%的成功率完全剥离电子箔。分层速度可以通过施加的电压和盐浓度控制,使用2 m NaCl溶液在20 V时达到最大值1.66 mm s(-1)。这样的过程既不会造成机械损坏,也不会造成化学污染。因此,分层的电子系统将保持完整,如高性能碳纳米管(CNT)薄膜晶体管和在4微米厚度的5.5厘米x 5.0厘米聚对二甲苯基薄膜上构建的集成电路所证明的。此外,CAED策略可应用于流行的聚合物薄膜,并赋予设计和制造各种超薄电子系统以极大的灵活性和能力。

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