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Space-Charge-Limited Post Transit Currents Spectroscopy in Poly(methylphenylsilylene)

机译:聚(甲基苯基甲硅烷基)中的空间电荷限制的过境电流光谱

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Transient space-charge-limited currents (T-SCLCs) were used as a method for examining drift mobility, recombination and transport mechanisms for a typical poly(silylene), poly(methylphenylsilylene) (PMPSi). It was found that T-SCLCs present a unique possibility for injecting constant charge into a material with strong dependence of the generation efficiency on the electric field strength. This charge is given by space charge limitations and is thus independent of the transport properties of the material. The post-transit T-SCLC hole emission signals from deep traps have been measured using post-transit T-SCLCs. A density-of-electron-states distribution for deep trapping hole states with a tail-like exponential and a Gaussian distribution centred at 0.55 eV were found.
机译:瞬态空间电荷限制电流(T-SCLC)用作检查典型聚(亚甲硅基),聚(甲基苯基亚甲硅基)(PMPSi)的漂移迁移率,重组和传输机制的方法。已经发现,T-SCLC存在将恒定电荷注入到材料中的独特可能性,这与发电效率强烈依赖于电场强度有关。这种电荷是由空间电荷的限制给出的,因此与材料的传输特性无关。已使用过境T-SCLC测量了深陷阱的过境T-SCLC空穴发射信号。发现深陷阱状态的电子密度分布具有尾状指数,高斯分布的中心为0.55 eV。

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