Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

摘要

The location of GaN nanowires is controlled with essentially perfect selectivity using patterned SiN_x prior to molecular beam epitaxy growth. Nanowire growth is uniform within mask openings and absent on the mask surface for over 95% of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires are controlled by the size of the mask openings. Openings of approximately 500 nm or less produce single nanowires with symmetrically faceted tips.