机译:金属-绝缘体-半导体结构中通过分子量子点的单电子隧穿
International Center for Young Scientists & International Center for Materials Nanoarchitechtonics National Institute for Materials Scienece 1-1 Namiki.Tsukuba 305-0044, Japan;
Advanced Electronic Materials Center National Institute for Materials Science 1-1 Namiki.Tsukuba 305-0044, japan,Graduate School of Pure and Applied Sciences University of Tsukuba 1-1-1 Tennoudai, Tsukuba 305-8573, Japan;
Advanced Electronic Materials Center National Institute for Materials Science 1-1 Namiki.Tsukuba 305-0044, japan;
Advanced Electronic Materials Center National Institute for Materials Science 1-1 Namiki.Tsukuba 305-0044, japan,Department of Chemistry and Biochemistry Faculty of Engineering Kyushu University 1-1 Namiki.Tsukuba 305-0044, Japan;
机译:基于三个电和光控隧道耦合量子点的线性结构的单电子晶体管
机译:通过单电子敏感静电力谱法测量的隧穿速率揭示单个量子点的能级结构。
机译:通过一对耦合量子点的弹性单电子隧穿进行单点光谱
机译:在室温下通过SOI-FET中的少量施主量子点进行单电子隧穿操作
机译:耦合施主量子点的硅纳米晶体管中单电子隧穿的表征
机译:单电子泵浦硅金属氧化物半导体量子点
机译:单点光谱通过弹性单电子隧道穿过 一对耦合量子点