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首页> 外文期刊>Advanced Functional Materials >Inversion of Dominant Polarity in Ambipolar Polydiketopyrrolopyrrole with Thermally Removable Groups
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Inversion of Dominant Polarity in Ambipolar Polydiketopyrrolopyrrole with Thermally Removable Groups

机译:具有可热去除基团的双极性聚二酮吡咯并吡咯中的主极性反转

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摘要

A narrow bandgap polymeric semiconductor, BOC-PTDPP, comprising aikyl substituted diketopyrrolopyrrole (DPP) and tert-butoxycarbonyl (t-BOC)-protected DPP, is synthesized and used in organic field-effect transistors (OFETs). The polymer films are prepared by solution deposition and thermal annealing of precursors featuring thermally labile t-BOC groups. The effects of the thermal cleavage on the molecular packing structure in the polymer thin films are investigated using thermogravimetric analysis (TCA), UV-vis spectroscopy, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray diffraction (XRD) analysis. Upon utilization of solution-shearing process, integrating the ambipolar BOC-PTDPP into transistors shows p-channel dominant characteristics, resulting in hole and electron mobilities as high as 1.32 × 10~(-2) cm~(-2) V~(-1) s~(-1) and 2.63 × 10~(-3) cm~(-2) V~(-1) s~(-1) which are about one order of magnitude higher than those of the drop-cast films. Very intriguingiy, the dominant polarity of charge carriers changes from positive to negative after the thermal cleavage of t-BOC groups at 200 ℃. The solution-sheared films upon subsequent thermal treatment show superior electron mobility (μe = 4.60 × 10~(-2) cm~(-2) V~(-1) s~(-1)), while the hole mobility decreases by one order of magnitude (μh - 4.30 × 10~(-3) cm~(-2) V~(-1) s~(-1)). The inverter constructed with the combination of two identical ambipolar OFETs exhibits a gain of-10. Reported here for the first time is a viable approach to selectively tune dominant polarity of charge carriers in solution-processed ambipolar OFETs, which highlights the electronically tunable ambipolarity of thermocleavable polymer by simple thermal treatment.
机译:合成了一种窄带隙聚合物半导体BOC-PTDPP,它包含烷基取代的二酮吡咯并吡咯(DPP)和叔丁氧羰基(t-BOC)保护的DPP,并用于有机场效应晶体管(OFET)。通过溶液沉积和对具有热不稳定的t-BOC基团的前体进行热退火来制备聚合物膜。使用热重分析(TCA),紫外可见光谱,原子力显微镜(AFM),傅立叶变换红外(FT-IR)光谱和X-射线分析热裂解对聚合物薄膜中分子堆积结构的影响射线衍射(XRD)分析。利用溶液剪切过程,将双极性BOC-PTDPP集成到晶体管中表现出p沟道主导特性,从而导致空穴和电子迁移率高达1.32×10〜(-2)cm〜(-2)V〜(- 1)s〜(-1)和2.63×10〜(-3)cm〜(-2)V〜(-1)s〜(-1),比压铸法高约一个数量级电影。有趣的是,t-BOC基团在200℃热裂解后,载流子的主导极性从正变负。在随后的热处理中,溶液剪切膜表现出优异的电子迁移率(μe= 4.60×10〜(-2)cm〜(-2)V〜(-1)s〜(-1)),而空穴迁移率降低了一个数量级(μh-4.30×10〜(-3)cm〜(-2)V〜(-1)s〜(-1))。由两个相同的双极性OFET的组合构成的逆变器的增益为-10。本文首次报道了一种可行的方法,可选择性地调节溶液处理的双极性OFET中电荷载流子的主导极性,该方法通过简单的热处理突出了热裂解聚合物的电子可调双极性。

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  • 来源
    《Advanced Functional Materials》 |2012年第19期|4128-4138|共11页
  • 作者单位

    Interdisciplinary School of Green Energy KIER-UNISTAdvanced Centerfor Energy Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, South Korea;

    School of Nano-Bioscience and Chemical Engineering KIER-UNIST Advanced Centerfor Energy Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798, South Korea;

    School of Nano-Bioscience and Chemical Engineering KIER-UNIST Advanced Centerfor Energy Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798, South Korea;

    Department of Materials Physics Dong-A University Busan 604-714, South Korea;

    School of Nano-Bioscience and Chemical Engineering KIER-UNIST Advanced Centerfor Energy Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798, South Korea;

    Interdisciplinary School of Green Energy KIER-UNISTAdvanced Centerfor Energy Low Dimensional Carbon Materials Center Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, South Korea;

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