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首页> 外文期刊>Advanced Functional Materials >Oriented Growth of Al_2O_3:ZnO Nanolaminates for Use as Electron-Selective Electrodes in Inverted Polymer Solar Cells
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Oriented Growth of Al_2O_3:ZnO Nanolaminates for Use as Electron-Selective Electrodes in Inverted Polymer Solar Cells

机译:定向生长Al_2O_3:ZnO纳米层压板,用作反向聚合物太阳能电池中的电子选择电极

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摘要

Atomic layer deposition is used to synthesize Al_2O_3:ZnO(1:x) nanolaminates with the number of deposition cycles, x, ranging from 5 to 30 for evaluation as optically transparent, electron-selective electrodes in polymer-based inverted solar cells. Al_2O_3:ZnO(1:20) nanolaminates are found to exhibit the highest values of electrical conductivity (1.2 ×10~3 S cm~(-1); more than six times higher than for neat ZnO films), while retaining a high optical transmittance (≥80% in the visible region) and a low work function (4.0 eV).Such attractive performance is attributed to the structure (ZnO crystal size and crystal alignment) and doping level of this intermediate Al_2O_3:ZnO film composition. Polymer-based inverted solar cells using poly(3-hexylthiophene) (P3HT):phenyl-C_(61)-butyric acid methyl ester (PCBM) mixtures in the active layer and Al_2O_3:ZnO(1_20) nanolaminates as transparent electron-selective electrodes exhibit a power conversion efficiency of 3% under simulated AM 1.5 G, 100 mW cm~(-2) illumination.
机译:原子层沉积用于合成Al_2O_3:ZnO(1:x)纳米层压板,其沉积循环数x介于5到30之间,用于评估基于聚合物的倒置太阳能电池中的光学透明电子选择性电极。发现Al_2O_3:ZnO(1:20)纳米层压板显示出最高的电导率值(1.2×10〜3 S cm〜(-1);比纯ZnO薄膜高六倍以上),同时保留了高光学性能透射率(在可见光区域中≥80%)和低功函(4.0 eV)。这种吸引人的性能归因于这种中间Al_2O_3:ZnO薄膜成分的结构(ZnO晶体尺寸和晶体取向)和掺杂水平。在活性层中使用聚(3-己基噻吩)(P3HT):苯基-C_(61)-丁酸甲酯(PCBM)混合物和Al_2O_3:ZnO(1_20)纳米叠层作为透明电子选择电极的基于聚合物的倒置太阳能电池在模拟AM 1.5 G,100 mW cm〜(-2)照明下表现出3%的功率转换效率。

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  • 来源
    《Advanced Functional Materials》 |2012年第7期|p.1531-1538|共8页
  • 作者单位

    Center for Organic Photonics and Electronics (COPE) School of Electrical and Computer Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

    Center for Organic Photonics and Electronics (COPE) School of Electrical and Computer Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

    Center for Organic Photonics and Electronics (COPE) School of Electrical and Computer Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

    Center for Organic Photonics and Electronics (COPE) School of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

    Center for Organic Photonics and Electronics (COPE) School of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

    Center for Organic Photonics and Electronics (COPE) School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, GA 30332, USA;

    National Center for Photovoltaics,National Renewable Energy Laboratory Golden, CO 80401, USA;

    Department of Electrical Engineering Princeton University Princeton, NJ 08544, USA;

    Department of Electrical Engineering Princeton University Princeton, NJ 08544, USA;

    Center for Organic Photonics and Electronics (COPE) School of Electrical and Computer Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

    Center for Organic Photonics and Electronics (COPE) School of Electrical and Computer Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

    Center for Organic Photonics and Electronics (COPE) School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, GA 30332, USA,National Center for Photovoltaics,National Renewable Energy Laboratory Golden, CO 80401, USA;

    Center for Organic Photonics and Electronics (COPE) School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, GA 30332, USA;

    Department of Electrical Engineering Princeton University Princeton, NJ 08544, USA;

    Center for Organic Photonics and Electronics (COPE) School of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

    Center for Organic Photonics and Electronics (COPE) School of Electrical and Computer Engineering Georgia Institute ofTechnology Atlanta, GA 30332, USA;

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