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Non-Covalent Functionalization of Graphene Using Self-Assembly of Alkane-Amines

机译:使用链烷胺的自组装对石墨烯进行非共价官能化

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摘要

A simple, versatile method for non-covalent functionalization of graphene based on solution-phase assembly of alkane-amine layers is presented. Second-order Møller-Plesset (MP2) perturbation theory on a cluster model (methylamine on pyrene) yields a binding energy of≈220 meV for the amine-graphene interaction, which is strong enough to enable formation of a stable aminodecane layer at room temperature. Atomistic molecular dynamics simulations on an assembly of 1-aminodecane molecules indicate that a self-assembled monolayer can form, with the alkane chains oriented perpendicular to the graphene basal plane. The calculated monolayer height (≈1.7 nm) is in good agreement with atomic force microscopy data acquired for graphene functionalized with 1-aminodecane, which yield a continuous layer with mean thickness ≈1.7 nm, albeit with some island defects. Raman data also confirm that self-assembly of alkane-amines is a non-covalent process, i.e., it does not perturb the sp~2 hybridization of the graphene. Passivation and adsorbate n-doping of graphene field-effect devices using 1-aminodecane, as well as high-density binding of plasmonic metal nanoparticles and seeded atomic layer deposition of inorganic dielectrics using 1,10-diaminodecane are also reported.
机译:提出了一种基于烷烃-胺层的溶液相组装的简单,通用的石墨烯非共价官能化方法。团簇模型(pyr上的甲胺)的二阶Møller-Plesset(MP2)扰动理论为胺-石墨烯相互作用产生了约220 meV的结合能,该结合能足够强,可以在室温下形成稳定的氨基癸烷层。在1-氨基癸烷分子组装体上的原子分子动力学模拟表明,可以形成自组装单层,且烷烃链的取向垂直于石墨烯基面。计算得到的单层高度(约1.7 nm)与用1-氨基癸烷官能化的石墨烯所获得的原子力显微镜数据非常吻合,尽管存在一些岛状缺陷,但仍能得到平均厚度约1.7 nm的连续层。拉曼数据还证实烷胺的自组装是非共价过程,即,它不会干扰石墨烯的sp〜2杂交。还报道了使用1-氨基癸烷对石墨烯场效应器件进行钝化和吸附n掺杂,以及使用1,10-二氨基癸烷进行等离子体金属纳米颗粒的高密度结合和无机电介质的种子原子层沉积。

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  • 来源
    《Advanced Functional Materials》 |2012年第4期|p.717-725|共9页
  • 作者单位

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Advanced Microelectronic Center Aachen (AMICA) AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

    Advanced Microelectronic Center Aachen (AMICA) AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany;

    Tyndall National Institute University College Cork Lee Makings, Dyke Parade, Cork, Ireland;

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