Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2 Heterostructures

摘要

Research on van der Waals heterostructures based on stacked 2D atomic crystals is intense due to their prominent properties and potential applications for flexible transparent electronics and optoelectronics. Here, nonvolatile memory devices based on floating-gate field-effect transistors that are stacked with 2D materials are reported, where few-layer black phosphorus acts as channel layer, hexagonal boron nitride as tunnel barrier layer, and MoS2 as charge trapping layer. Because of the ambipolar behavior of black phosphorus, electrons and holes can be stored in the MoS2 charge trapping layer. The heterostructures exhibit remarkable erase/program ratio and endurance performance, and can be developed for high-performance type-switching memories and reconfigurable inverter logic circuits, indicating that it is promising for application in memory devices completely based on 2D atomic crystals.