首页> 外文期刊>Advanced Functional Materials >Using Molecular Design to Increase Hole Transport: Backbone Fluorination in the Benchmark Material Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]-thiophene (pBTTT)
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Using Molecular Design to Increase Hole Transport: Backbone Fluorination in the Benchmark Material Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]-thiophene (pBTTT)

机译:使用分子设计增加空穴传输:基准材料聚(2,5-双(3-烷基噻吩-2-基)噻吩并[3,2-b]-噻吩(pBTTT)中的主链氟化

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摘要

The synthesis of a novel 3,3'-difl uoro-4,4'-dihexadecyl-2,2'-bithiophene monomer and its copolymerization with thieno[3,2-b]thiophene to afford the fluorinated analogue of the well-known poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]-thiophene) (PBTTT) polymer is reported. Fluorination is found to have a significant influence on the physical properties of the polymer, enhancing aggregation in solution and increasing melting point by over 100 degrees C compared to nonfluorinated polymer. On the basis of DFT calculations these observations are attributed to inter and intramolecular S.F interactions. As a consequence, the fluorinated polymer PFBTTT exhibits a fourfold increase in charge carrier mobility compared to the nonfluorinated polymer and excellent ambient stability for a nonencapsulated transistor device.
机译:新型3,3'-二氟uoro-4,4'-二十六烷基-2,2'-联噻吩单体的合成及其与噻吩并[3,2-b]噻吩的共聚反应,得到了众所周知的氟化类似物据报道,聚(2,5-双(3-烷基噻吩-2-基)噻吩并[3,2-b]-噻吩)(PBTTT)聚合物。与非氟化聚合物相比,发现氟化对聚合物的物理性能有重大影响,增强溶液中的聚集并提高熔点超过100摄氏度。基于DFT计算,这些观察结果归因于分子间和分子内SF相互作用。结果,与非氟化聚合物相比,氟化聚合物PFBTTT在电荷载流子迁移率方面显示了四倍的增加,并且对于非密封晶体管器件而言,其具有优异的环境稳定性。

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    《Advanced Functional Materials》 |2015年第45期|7038-7048|共11页
  • 作者单位

    Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England;

    Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England;

    Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England;

    Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England;

    Cornell Univ, Cornell High Energy Synchrotron Source, Wilson Lab, Ithaca, NY 14853 USA;

    Cornell Univ, Cornell High Energy Synchrotron Source, Wilson Lab, Ithaca, NY 14853 USA;

    Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England;

    Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England;

    Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England|Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England;

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