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Enhanced Vertical Charge Transport in a Semiconducting P3HT Thin Film on Single Layer Graphene

机译:在单层石墨烯上的半导体P3HT薄膜中增强的垂直电荷传输

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摘要

The crystallization and electrical characterization of the semiconducting polymer poly(3-hexylthiophene) (P3HT) on a single layer graphene sheet is reported. Crazing incidence X-ray diffraction revealed that P3HT crystallizes with a mixture of face-on and edge-on lamellar orientations on graphene compared to mainly edge-on on a silicon substrate. Moreover, whereas ultrathin (10 nm) P3HT films form well oriented face-on and edge-on lamellae, thicker (50 nm) films form a mosaic of lamellae oriented at different angles from the graphene substrate. This mosaic of crystallites with π-π stacking oriented homogeneously at various angles inside the film favors the creation of a continuous pathway of interconnected crystallites, and results in a strong enhancement in vertical charge transport and charge carrier mobility in the thicker P3HT film. These results provide a better understanding of poly-thiophene crystallization on graphene, and should help the design of more efficient graphene based organic devices by control of the crystallinity of the semiconducting film.
机译:报告了单层石墨烯片上半导体聚合物聚(3-己基噻吩)(P3HT)的结晶和电学特性。裂纹入射X射线衍射表明,与硅衬底上的主要边缘对置层相比,P3HT在石墨烯上以面对层和边缘对层状取向的混合形式结晶。此外,尽管超薄(10 nm)P3HT膜形成了取向良好的面朝上和边缘对面的薄片,而较厚(50 nm)的膜却形成了与石墨烯基材以不同角度取向的薄片镶嵌。在膜内部以不同角度均匀定向的具有π-π堆叠的微晶镶嵌有助于形成互连微晶的连续路径,并在较厚的P3HT膜中大大增强了垂直电荷传输和电荷载流子迁移率。这些结果提供了对石墨上聚噻吩结晶的更好理解,并且应通过控制半导体膜的结晶度来帮助设计更有效的基于石墨烯的有机器件。

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  • 来源
    《Advanced Functional Materials 》 |2015年第5期| 664-670| 共7页
  • 作者单位

    Department of Physics Umea University Umea 90187, Sweden;

    Department of Physics Umea University Umea 90187, Sweden;

    Department of Physics McGill University, Montreal Quebec H3A 2T8, Canada;

    Department of Physics McGill University, Montreal Quebec H3A 2T8, Canada;

    Stanford Synchrotron Radiation Lightsource Menlo Park, CA 90187, USA;

    Stanford Synchrotron Radiation Lightsource Menlo Park, CA 90187, USA;

    Department of Physics Umea University Umea 90187, Sweden;

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