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Tunable Band-Selective UV-Photodetectors by 3D Self-Assembly of Heterogeneous Nanoparticle Networks

机译:通过异质纳米粒子网络的3D自组装进行可调谐的波段选择UV光电探测器

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摘要

Accurate detection of ultraviolet radiation is critical to many technologies including wearable devices for skin cancer prevention, optical communication systems, and missile launch detection. Here, a nanoscale architecture is presented for band-selective UV-photodetectors, which features unique tunability and miniaturization potential. The device layout relies on the 3D integration of ultraporous layers of tailored nanoparticles. By tailoring the transmittance window between the indirect band gap of TiO2 nanoparticles and the sharp edge of the direct band gap of ZnO, a band-selective photoresponse is achieved with tunable bandwidth to less than 30 nm and photo-to dark-current ratios of several millions at a light intensity of 86 mu W cm(-2) and operation bias of 1 V. The potential of this integrated morphology is shown by fabrication of the first inherent UVA photodetector with selectivity against the edge of the UVB and visible light of nearly 60 times. This tunable architecture and nanofabrication approach are compatible with state-of-the micromachining technologies and provide a flexible solution for the engineering of wearable band-selective photodetectors.
机译:准确检测紫外线辐射对于许多技术至关重要,这些技术包括可预防皮肤癌的可穿戴设备,光通信系统和导弹发射检测。在此,提出了一种用于波段选择型紫外光电探测器的纳米级架构,该架构具有独特的可调性和小型化潜力。设备布局依赖于定制纳米颗粒的超多孔层的3D集成。通过调整TiO2纳米粒子的间接带隙与ZnO直接带隙的尖锐边缘之间的透射率窗口,可实现带选择的光响应,其可调带宽小于30 nm,光/暗电流比为在86 mu W cm(-2)的光强度和1 V的操作偏置下有数以百万计的人。这种集成形态的潜力通过制造第一个固有的UVA光电探测器来表现出来,该探测器对UVB的边缘和对可见光的选择性接近60次这种可调谐的体系结构和纳米制造方法与最新的微加工技术兼容,并为可穿戴式波段选择光电探测器的工程设计提供了灵活的解决方案。

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  • 来源
    《Advanced Functional Materials》 |2016年第40期|7359-7366|共8页
  • 作者单位

    Australian Natl Univ, Res Sch Engn, Nanotechnol Res Lab, Canberra, ACT 2601, Australia;

    Australian Natl Univ, Res Sch Engn, Nanotechnol Res Lab, Canberra, ACT 2601, Australia;

    City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China;

    City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China;

    Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia;

    Australian Natl Univ, Res Sch Engn, Nanotechnol Res Lab, Canberra, ACT 2601, Australia;

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