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Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications

机译:用于柔性电阻式随机存取存储器应用的液体剥落型黑色磷纳米片薄膜

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摘要

Black phosphorous (BP) is a unique layered p-type semiconducting material. The successful use of BP nanosheets in field-effect transistors fueled research on BP atomic layers that focuses on, e.g., the exploration of their optical and electronic properties, and promising applications in (opto) electronics. However, BP films are prone to degradation in ambient conditions, which prevents their commercial application. Here, a route to the application of BP films as an environmental stable nonvolatile resistive random access memory is presented. The BP films, which are prepared from exfoliated BP nanosheets in selected solvents, show solvent-dependent degradation upon ambient exposure, inducing the formation of an amorphous top degraded layer (TDL). The TDL acts as an insulating barrier just below the Al electrode. This property that was only obtained by degradation, confers a bipolar resistive switching behavior with a high ON/OFF current ratio up to similar to 3 x 10(5) and excellent retention ability over 10(5) s to the flexible BP memory devices. The TDL also prevents propagation of degradation further into the film, ensuring excellent memory performance even after three month of ambient exposure.
机译:黑磷(BP)是一种独特的层状p型半导体材料。 BP纳米片在场效应晶体管中的成功使用推动了对BP原子层的研究,该研究集中在例如探索其光学和电子特性以及在(光电)电子领域的应用前景广阔。然而,BP膜在环境条件下易于降解,这阻碍了它们的商业应用。在这里,提出了一种将BP薄膜用作环境稳定的非易失性电阻式随机存取存储器的途径。由剥离的BP纳米片在选定的溶剂中制备的BP膜在环境暴露下会显示出溶剂依赖性的降解,从而导致形成无定形顶部降解层(TDL)。 TDL在Al电极正下方充当绝缘势垒。仅通过降级获得的此特性可将双极性电阻开关行为赋予柔性BP存储设备,该开关具有高达3 x 10(5)的高ON / OFF电流比和超过10(5)s的出色保持能力。 TDL还可以防止降解进一步传播到胶片中,即使在环境暴露三个月后也可以确保出色的存储性能。

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  • 来源
    《Advanced Functional Materials》 |2016年第12期|2016-2024|共9页
  • 作者单位

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China|Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China;

    Northwest Inst Nonferrous Met Res, Xian 710016, Peoples R China;

    Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100864, Peoples R China;

    Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Beijing 100864, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China;

    Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China;

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