THIN FILMS STRUCTURE FOR RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF

摘要

This invention is a natural oxide film and the silicon substrate , a lower electrode formed on the substrate , the lower and a perovskite oxide thin film formed on the electrode , and provides a resistance change memory device for a thin film structure comprising the upper layer formed on the perovskite oxide thin film . According to the invention , ReRAM easily integrated by improving the film structure for the device is improved and On / Off ratio of the resistance can be maximized the applicability and usability of the ReRAM device .