Formation of a Quasi-Free-Standing Single Layer of Graphene and Hexagonal Boron Nitride on Pt(111) by a Single Molecular Precursor

摘要

It is shown that on Pt(111) it is possible to prepare hexagonal boron nitride (h -BN) and graphene (G) in-plane heterojunctions from a single molecular precursor, by thermal decomposition of dimethylamine borane (DMAB). Photoemission, near-edge X-ray absorption spectroscopy, low energy electron microscopy, and temperature programmed desorption measurements indicate that the layer fully covers the Pt(111) surface. Evidence of in-plane layer continuity and weak interaction with Pt substrate has been established. The findings demonstrate that dehydrogenation and pyrolitic decomposition of DMAB is an efficient and easy method for obtaining a continuous almost freestanding layer mostly made of G, h -BN with only a low percentage (< 3%) of impurities (B and N-doped G domains or C-doped h -BN or boron carbonitride, BCN at the boundaries) in the same 2D sheet on a metal substrate, such as Pt(111), paving the way for the advancement of next-generation G-like-based electronics and novel spintronic devices.