机译:具有双层TiO2 / SiOX绝缘堆栈的电阻式随机存取存储单元,用于同时进行丝状和分布式电阻切换
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;
Brno Univ Technol, CEITEC BUT, Brno 61669, Czech Republic;
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China|Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA;
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China|MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA;
Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China;
CAFM (conductive atomic force microscope); distributed switching; filamentary switching; RRAM (resistive random access memories); resistive switching;
机译:用于电阻随机存取存储器的双层NIOx / TiO2的增强电阻切换效果的机制
机译:双层HfO2 / TiO2电阻式随机存取存储器的增强的电阻开关性能
机译:双层基于二氧化铈的电阻式随机存取存储设备的双极电阻式开关的性能稳定性和功能可靠性
机译:3D可堆叠和4F 2 sup>交叉点双极和单极电阻式随机存取存储器上的阈值真空开关(TVS)
机译:电阻切换随机存取存储器(RRAM):对实际应用的分析,建模和表征
机译:基于TiO2的电阻式随机存取存储设备中的电阻切换的远程控制
机译:TIN / TI / TIO2 / SIOx / SI电阻随机存取存储器的短期内存动态
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。