机译:低温喷雾热解沉积高质量In2O3层的莱顿弗罗斯特效应及其在高电子迁移率晶体管中的应用
Imperial Coll London, Blackett Lab, London SW7 2AZ, England|Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England;
Imperial Coll London, Blackett Lab, London SW7 2AZ, England|Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England;
Imperial Coll London, Blackett Lab, London SW7 2AZ, England|Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England;
Imperial Coll London, Blackett Lab, London SW7 2AZ, England|Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England;
Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece;
Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece;
Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece;
Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece;
Cornell Univ, Wilson Lab, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA;
Imperial Coll London, Blackett Lab, London SW7 2AZ, England|Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England|King Abdullah Univ Sci & Technol, Div Phys Sci & Engn, Thuwal 239556900, Saudi Arabia;
indium oxide; Leidenfrost effect; solution processing; spray pyrolysis; thin-film transistors;
机译:基于Ga_2O_3的高电子迁移率薄膜晶体管的低温超声喷雾热解生长
机译:通过金属有机化学气相沉积法在低温InAlAs缓冲层上的InAlAs / InGaAs高电子迁移率晶体管
机译:液态二甲基(N-乙氧基-2,2-二甲基丙酰胺基)铟的等离子体增强原子层沉积在低温下生长氧化铟薄膜,以用于高迁移率薄膜晶体管
机译:首先说明原子层沉积的BEOL兼容的IN2O3 3D翅片晶体管和集成电路:高迁移率为113cm2 / v•S,最大漏极电流为2.5 mA /μm,最大电压增益为38 v / v IN2O3逆变器
机译:用于低温功率电子器件的磷化铟通道高电子迁移率晶体管。
机译:低温磁控溅射法生长的Sn含量高达7%的高质量GeSn层
机译:通过在低温下喷雾热解探索莱登弗罗斯特效应,在低温下喷雾热解及其在高电子迁移率晶体管中的应用