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Tunable Optical Modulator by Coupling a Triboelectric Nanogenerator and a Dielectric Elastomer

机译:通过耦合摩擦纳米发生器和介电弹性体的可调光调制器

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摘要

A conjunction system based on triboelectric nanogenerator (TENG) and dielectric elastomer actuator (DEA) is a promising demonstration for the application of TENG in the field of electronic skin and soft robotics. In this paper, a triboelectric tunable smart optical modulator (SOM) has been proposed based on this TENG-DEA system. The SOM has a very simple structure of an elastomer film and electrodes made of dispersed silver nanowires. Owing to the voltage induced rippling of the elastomer, the output of the TENG for a contact-separation motion at a velocity ranging from 0.5 to 10 cm s(-1) can decrease the SOM's transmittance from 72% to 40%, which is enough for realizing the function of privacy protection. Meanwhile, an effective operation method is also proposed for this SOM. By serially connecting an accessory DEA to the SOM, an external bias voltage can be applied on the SOM to tune its "threshold" voltage and the output from TENG can smoothly regulate the transmittance on the basis of the bias. The proposed operation method has excellent applicability for all DEA-based devices, which can promote the practical study of TENG-DEA system in the field of micro-electro-mechanical system and human-robots interaction.
机译:基于摩擦纳米发电机(TENG)和介电弹性体致动器(DEA)的联合系统是TENG在电子皮肤和软机器人领域中的应用的有希望的演示。在本文中,基于该TENG-DEA系统提出了摩擦电可调智能光调制器(SOM)。 SOM具有非常简单的弹性体膜结构和由分散的银纳米线制成的电极。由于弹性体的电压引起的波纹,以0.5至10 cm s(-1)的速度进行接触分离运动的TENG输出可将SOM的透射率从72%降低至40%,这足够实现隐私保护功能。同时,针对该SOM还提出了一种有效的操作方法。通过将附件DEA串行连接到SOM,可以在SOM上施加外部偏置电压以调整其“阈值”电压,并且TENG的输出可以基于该偏置平稳地调节透射率。所提出的操作方法对所有基于DEA的设备都具有极好的适用性,可以促进TENG-DEA系统在微机电系统和人机交互领域的实际研究。

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  • 来源
    《Advanced Functional Materials》 |2017年第1期|1603788.1-1603788.9|共9页
  • 作者单位

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China|Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;

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