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Noncentrosymmetric Tetrel Pnictides RuSi_4P_4 and IrSi_3P_3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

机译:非中心体对称TETREL PNICTIDER RUSI_4P_4和IRSI_3P_3:非线性光学材料具有出色的激光损伤阈值

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摘要

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi4P4 and IrSi3P3 are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and Si-29 and P-31 magic angle spinning NMR. In agreement with previous report RuSi4P4 crystallizes in NCS space group P1, while IrSi3P3 is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi4P4 and IrSi3P3 to be wide bandgap (E-g) semiconductors, E-g = 1.9 and 1.8 eV, respectively. RuSi4P4 and IrSi3P3 outperform the current state-of-the-art infrared SHG material, AgGaS2, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (approximate to 2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi4P4 and IrSi3P3 are promising candidates for longer wavelength NLO materials.
机译:由于其二次谐波产生(SHG)活性和大激光损伤阈值(LDT),非群体微分(NCS)TETREL PNICTES最近产生了非线性光学(NLO)材料的兴趣。这里合成并表征了非金属富含磷化硅Rusi4P4和IRSI3P3。使用单晶X射线衍射和Si-29和P-31魔角旋转NMR重新调用它们的晶体结构。与先前的报告Rusi4P4在NCS空间组P1中结晶时,发现IRSI3P3在NCS空间组CM中结晶,与先前报告的空间组C2相比。 DFT计算和漫反射测量的组合揭示了Rusi4P4和IRSI3P3的宽带隙(E-G)半导体,E-G = 1.9和1.8eV。 Rusi4P4和IRSI3P3优于当前最先进的红外SHG材料,AGGAS2,都在SHG活动和激光诱导损伤阈值中。由于高热稳定性(最多1373 k),宽带隙(近似为2eV),NCS晶体结构,强SHG响应和大型LDT值,Rusi4P4和IRSI3P3是较长波长NLO材料的承诺候选者。

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