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首页> 外文期刊>Advanced Functional Materials >In Situ Regulating the Order-Disorder Phase Transition in Cs_2AgBiBr_6 Single Crystal toward the Application in an X-Ray Detector
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In Situ Regulating the Order-Disorder Phase Transition in Cs_2AgBiBr_6 Single Crystal toward the Application in an X-Ray Detector

机译:原位调节Cs_2AgBiBr_6单晶的有序无序相变向X射线探测器的应用

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摘要

The double perovskite Cs2AgBiBr6 single crystal holds great potential for detecting applications because of its low minimum detectable dose rate and toxic-free merit. Nevertheless, the disordered arrangement of Ag+/Bi3+ usually gives rise to unexpected structural distortion and thereafter heavily influences the photoelectric properties of the Cs2AgBiBr6 single crystal. Herein, phenylethylamine bromide is demonstrated to be capable of in situ regulation of the order-disorder phase transition in the Cs2AgBiBr6 single crystal. The improved ordering extent of alternatively arranged [AgX6](5-) and [BiX6](3-) octahedra is theoretically and experimentally proven to decrease the defect density and suppress self-trapped exciton formation, and thereby tune the band gap and enhance the carrier mobility, which consequently promotes its application in an X-ray detector. The performance of a corresponding detector based on PEA-Cs2AgBiBr6 single crystal displays superior performances, e.g., longer carrier drift distance, higher photoconductive gain, and faster current response (13 vs 3190 mu s). Prominently, the as-fabricated PEA-Cs2AgBiBr6 single-crystal X-ray detector has an extremely high sensitivity with a value of 288.8 mu C Gy(air)(-1) cm(-2) under a bias of 50 V (22.7 V mm(-1)), which largely outperforms those of their counterparts with lower ordering structure.
机译:双钙钛矿Cs2AgBiBr6单晶具有最低的可检测最低剂量率和无毒优点,在检测应用方面具有巨大潜力。然而,Ag + / Bi3 +的无序排列通常会引起意想不到的结构变形,此后会严重影响Cs2AgBiBr6单晶的光电性能。在本文中,已证明苯乙胺溴化物能够原位调节Cs2AgBiBr6单晶中的有序无序相变。从理论和实验上证明,交替排列的[AgX6](5-)和[BiX6](3-)八面体的有序度提高了,从而降低了缺陷密度并抑制了自陷激子的形成,从而调节了带隙并增强了带隙。载流子迁移率,从而促进其在X射线探测器中的应用。基于PEA-Cs2AgBiBr6单晶的相应检测器的性能显示出卓越的性能,例如更长的载流子漂移距离,更高的光电导增益和更快的电流响应(13 vs 3190μs)。突出的是,所制造的PEA-Cs2AgBiBr6单晶X射线探测器在50 V(22.7 V)的偏压下具有极高的灵敏度,其值为288.8μC Gy(空气)(-1)cm(-2)。 mm(-1)),其性能大大优于具有较低顺序结构的同类产品。

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  • 来源
    《Advanced Functional Materials 》 |2019年第20期| 1900234.1-1900234.9| 共9页
  • 作者单位

    Jinan Univ, Inst New Energy Technol, Dept Elect Engn, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China;

    HUST, WNLO, Wuhan 430074, Hubei, Peoples R China|HUST, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;

    Jinan Univ, Inst New Energy Technol, Dept Elect Engn, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China;

    HUST, WNLO, Wuhan 430074, Hubei, Peoples R China|HUST, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;

    Jinan Univ, Inst New Energy Technol, Dept Elect Engn, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China;

    Jinan Univ, Inst New Energy Technol, Dept Elect Engn, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China;

    Jinan Univ, Inst New Energy Technol, Dept Elect Engn, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China;

    Jinan Univ, Inst New Energy Technol, Dept Elect Engn, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China;

    Jinan Univ, Inst New Energy Technol, Dept Elect Engn, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Cs2AgBiBr6 single crystal; microstructure; order-disorder phase transition; X-ray detector;

    机译:Cs2AgBiBr6单晶;组织;无序相变;X射线探测器;

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