机译:通过工程铁磁剩余磁化的非易失性存储器的十种状态
Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China|King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;
King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;
King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;
King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;
Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;
Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China;
King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China|Univ Jinan, Spintron Inst, Jinan 250022, Shandong, Peoples R China;
Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;
magnetic tunneling junctions; magnetoresistance; multilevel states; nonvolatile memory; remanent magnetization;
机译:多功能铁磁/铁电混合体中非易失性,可逆电场控制的剩余磁化强度开关
机译:Ni-Mn-Ga铁磁形状记忆合金中磁滞磁滞和机械磁化旋转的相场仿真
机译:Ni-Mn-Ga铁磁形状记忆合金的磁滞和机械感应剩余磁化旋转的相场模拟
机译:铁磁薄膜反弹磁化对MOS晶体管I-V特性的影响:围绕栅极区域的圆形和相对图案化铁磁薄膜的I-V特征
机译:基于稀释的磁性半导体和混合半导体铁磁纳米结构的非易失性自旋存储器。
机译:TaN-Al2O3-Si3N4-HfSiOx-硅非易失性存储器的偶极工程功函数调整
机译:通过工程铁磁再现磁化的十个非易失性记忆状态