Effect of Remanent Magnetization of Ferromagnetic Thin Film on I-V Characteristics of MOS Transistor: I-V Characteristics of Circular and Opposite Patterned Ferromagnetic Thin Film Across Gate Area

摘要

Control of the current drain current by using Lorentz force was tried in the field effect transistor (FET). Ni-Zn ferrite, Fe thin films were incorporated within MOSFET to design two different types of configurations (circular and opposite patterned). We discuss the effect of the remanent magnetic flux density on the I{sub}D-V{sub}D characteristic. It was clarified that opposite patterned is effective to control the I{sub}D-V{sub}D characteristics.