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首页> 外文期刊>Advanced energy materials >High Thermoelectric Performance through Crystal Symmetry Enhancement in Triply Doped Diamondoid Compound Cu2_SnSe_3
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High Thermoelectric Performance through Crystal Symmetry Enhancement in Triply Doped Diamondoid Compound Cu2_SnSe_3

机译:通过晶体对称增强在三种掺杂的样品晶体化合物中的晶体对称增强Cu2_snse_3的高热电性能

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摘要

The presence of high crystallographic symmetry and nanoscale defects are favorable for thermoelectrics. With proper electronic structures, a highly symmetric crystal tends to possess multiple carrier channels and promote electrical conductivity without sacrificing Seebeck coefficient. In addition, nanoscale defects can effectively scatter acoustic phonons to suppress thermal conductivity. Here, it is reported that the triple doping of Cu2SnSe3 leads to a high ZT value of 1.6 at 823 K for Cu1.85Ag0.15(Sn0.88Ga0.1Na0.02)Se-3, and a decent average ZT (ZT(ave)) value of 0.7 is also achieved for Cu1.85Ag0.15(Sn0.93Mg0.06Na0.01)Se-3 from 475 to 823 K. This study reveals: 1) Ag doping on Cu sites generates numerous point defects and greatly decreases lattice thermal conductivity. 2) Doping Mg or Ga converts the monoclinic Cu2SnSe3 into a cubic structure. This symmetry enhancing leads to an increase in the effective mass from 0.8 m(e) to 2.6 m(e) (m(e), free electron mass) and the power factor from 4.3 mu W cm(-1) K-2 for Cu2SnSe3 to 11.6 mu W cm(-1) K-2. 3) Na doping creates dense dislocation arrays and nanoprecipitates, which strengthens the phonon scattering. 4) Pair distribution function analysis shows localized symmetry breakdown in the cubic Cu1.85Ag0.15(Sn0.88Ga0.1Na0.02)Se-3. This work provides a standpoint to design promising thermoelectric materials by synergistically manipulating crystal symmetry and nanoscale defects.
机译:高晶体对称和纳米级缺陷的存在是有利的热电。通过适当的电子结构,高度对称的晶体倾向于具有多个载波通道并促进导电性而不会牺牲塞贝克系数。另外,纳米级缺陷可以有效地散射声子位以抑制导热性。这里,据报道,Cu2SNSE3的三掺杂导致823k的高Zt值为1.6,对于Cu1.85Ag0.15(SN0.88Ga0.1Na0.02)SE-3和体面的平均ZT(ZT(AVE ))值为0.7的值也可以用于475至823k的Cu1.85Ag0.15(SN0.93mg0.06NA0.01)SE-3,本研究显示:1)在Cu位点上的Ag掺杂产生无数点缺陷并大大降低晶格导热率。 2)掺杂Mg或Ga将单斜晶型Cu2snse3转换成立方结构。该对称性增强导致从0.8M(e)至2.6μm(e)(M(e),自由电子质量)和4.3μm(-1)k-2的功率因数的有效质量增加Cu2SNSE3至11.6μWcm(-1)k-2。 3)Na掺杂产生致密的位错阵列和纳米尺寸,这加强了声子散射。 4)对分布函数分析显示立方Cu1.85AG0.15(SN0.88GA0.1NA0.02)SE-3中的局部对称性分解。这项工作提供了通过协同操纵晶体对称和纳米级缺陷来设计有前途的热电材料的观点。

著录项

  • 来源
    《Advanced energy materials 》 |2021年第42期| 2100661.1-2100661.11| 共11页
  • 作者单位

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Northwestern Univ Dept Chem Evanston IL 60208 USA;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|Northwestern Univ Dept Chem Evanston IL 60208 USA;

    Tokyo Inst Technol Mat & Struct Lab Yokohama Kanagawa 2268503 Japan;

    Tokyo Inst Technol Mat & Struct Lab Yokohama Kanagawa 2268503 Japan;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore;

    Northwestern Univ Dept Chem Evanston IL 60208 USA;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore;

    Univ Padua Dept Phys & Astron I-35131 Padua Italy;

    Univ Verona Italy Univ Verona Dept Comp Sci Ca Vignal 2 Str Grazie 15 I-37134 Verona Italy;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|ASTAR Inst Mat Res & Engn Singapore 138634 Singapore;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore;

    ASTAR Inst Mat Res & Engn Singapore 138634 Singapore;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore|ASTAR Inst Mat Res & Engn Singapore 138634 Singapore;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;

    Southern Univ Sci & Technol Dept Phys Shenzhen 518055 Peoples R China;

    ASTAR Inst Mat Res & Engn Singapore 138634 Singapore;

    Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore;

    Northwestern Univ Dept Chem Evanston IL 60208 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    crystal symmetry; diamondoid structure; nanoscale defects; thermoelectrics;

    机译:晶体对称;菱形结构;纳米级缺陷;热电;

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