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Heterojunction-Depleted Lead-Free Perovskite Solar Cells $1with Coarse-Grained B-γ-CsSnl_3 Thin Films

机译:异结耗尽无铅钙钛矿太阳能电池1美元,粗粒子B-γ-CSSNL_3薄膜

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摘要

Perovskite solar cells (PSCs) have been emerging as a breakthrough photo-voltaic technology, holding unprecedented promise for low-cost, high-efficiency renewable electricity generation. However, potential toxicity associated with the state-of-the-art lead-containing PSCs has become a major concern. The past research in the development of lead-free PSCs has met with mixed success. Herein, the promise of coarse-grained B-gamma-CsSnI3 perovskite thin films as light absorber for efficient lead-free PSCs is demonstrated. Thermally-driven solid-state coarsening of B-gamma-CsSnI3 perovskite grains employed here is accompanied by an increase of tin-vacancy concentration in their crystal structure, as supported by first-principles calculations. The optimal device architecture for the efficient photovoltaic operation of these B-gamma-CsSnI3 thin films is identified through exploration of several device architectures. Via modulation of the B-gamma-CsSnI3 grain coarsening, together with the use of the optimal PSC architecture, planar heterojunction-depleted B-gamma-CsSnI3 PSCs with power conversion efficiency up to 3.31% are achieved without the use of any additives. The demonstrated strategies provide guidelines and prospects for developing future high-performance lead-free PVs.
机译:Perovskite太阳能电池(PSC)一直是突破性的光伏技术,持有前所未有的低成本,高效可再生发电。然而,与最先进的含铅PSC相关的潜在毒性已成为一个主要问题。过去PSC发展的过去的研究已经满足了混合成功。这里,证明了粗粒粒子B-Gamma-CSSNI3作为用于有效无铅PSC的光吸收剂的粗粒粒子B-Gamma-CSSNI3钙钛矿薄膜的承诺。本文使用的B-Gamma-CSSNI3钙钛矿颗粒的热驱动固态粗化伴随着通过第一原理计算的晶体结构中的锡空位浓度的增加。通过探索多个器件架构来识别用于这些B-Gamma-CSSNI3薄膜的有效光伏操作的最佳装置架构。通过调制B-Gamma-CSSNI3晶粒粗化,与使用最佳PSC架构一起使用,在不使用任何添加剂的情况下实现高达3.31%的功率转换效率的平面异质结耗尽的B-Gamma-CSSNI3 PSC。所证明的策略为发展未来的高性能无铅PVS提供了指导方针和前景。

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  • 来源
    《Advanced energy materials》 |2016年第24期|1601130.1-1601130.6|共6页
  • 作者单位

    Nanyang Technol Univ Sch Elect & Elect Engn Luminous Ctr Excellence Semicond Lighting & Displ 50 Nanyang Ave Singapore 639798 Singapore;

    Brown Univ Sch Engn Providence RI 02912 USA;

    Univ Nebraska Dept Chem Lincoln NE 68588 USA;

    Brown Univ Sch Engn Providence RI 02912 USA;

    Nanyang Technol Univ Sch Elect & Elect Engn Luminous Ctr Excellence Semicond Lighting & Displ 50 Nanyang Ave Singapore 639798 Singapore;

    Chinese Acad Sci Qingdao Inst Bioenergy & Bioproc Technol Qingdao 266101 Peoples R China;

    Univ Nebraska Dept Chem Lincoln NE 68588 USA;

    Brown Univ Sch Engn Providence RI 02912 USA;

    Nanyang Technol Univ Sch Elect & Elect Engn Luminous Ctr Excellence Semicond Lighting & Displ 50 Nanyang Ave Singapore 639798 Singapore|South Univ Sci & Technol China Coll Engn Dept Elect & Elect Engn Shenzhen 518055 Peoples R China;

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