Schottky solar cells based on CsSnl_3 thin-films

摘要

We describe a Schottky solar cell based on the perovskite semiconductor CsSnI_33 thin-film. The cell consists of a simple layer structure of indium-tin-oxide/CsSnI_3/Au/Ti on glass substrate. The measured power conversion efficiency is 0.9%, which is limited by the series and shunt resistance. The influence of light intensity on open-circuit voltage and short-circuit current supports the Schottky solar cell model. Additionally, the spectrally resolved short-circuit current was measured, confirming the unintentionally doped CsSnI_3 is of p-type characteristics. The CsSnI_3 thin-film was synthesized by alternately depositing layers of SnCl_2 and CsI on glass substrate followed by a thermal annealing process.