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H_2-Directing Strategy on In Situ Synthesis of Co-MoS_2 with Highly Expanded Interlayer for Elegant HER Activity and its Mechanism

机译:H_2 - 利用高度膨胀中间互动的共同综合综合策略,为优雅她的活动及其机制

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摘要

MoS2 has drawn great attention as a promising Pt-substituting catalyst for the hydrogen evolution reaction (HER). This work utilizes H-2 as the structure directing agent (SDA) to in situ synthesize a range of Co-MoS2-n (n = 0, 0.5, 1.0, 1.4, 2.0) with expanded interlayer spacings (d = 9.2 - 11.1 angstrom), which significantly boost their HER activities. The Co-MoS2-1.4 with an interlayer spacing of 10.3 angstrom presents an extremely low overpotential of 56 mV (at 10 mA cm(-2)) and a Tafel slope of 32 mV dec(-1), which is superior than most reported MoS2-based catalysts. Density function theory calculations are used to gain insights that i) the H-2 can be dissociatively adsorbed on MoS2 and greatly affect the related surface free energy by regulating the interlayer spacing; ii) the expanded interlayer spacing can significantly decrease the absolute value of Delta G(H), thereby leading to greatly promoted HER activity. Additionally, the large amounts of 1T phase (73.9-79.2%) and Co-Mo-S active sites (40.9-91.3%) also contribute to the enhanced HER activity of the synthesized samples. Overall, a simple new strategy for in situ synthesis of Co-MoS2 with an expanded interlayer spacing is proposed, which sheds light on other 2D energy material designs.
机译:MOS2引起了极大的关注,作为氢进化反应(她)的有前途的PT替代催化剂。该工作利用H-2作为结构指导剂(SDA),原位合成具有扩展层间间距的CO-MOS2-N(n = 0,0.5,1.0,1.0,1.4,2.0)的范围(D = 9.2-11.1埃埃),这显着提高了她的活动。具有10.3埃的中间间距的CO-MOS2-1.4呈现出56mV的极低过电位(10 mA cm(-2))和32mV DEC(-1)的TAFEL斜率,其优于大多数报道基于MOS2的催化剂。密度函数理论计算用于获得见解,即i)H-2可以解开在MOS2上,并通过调节层间距来极大地影响相关的表面自由能; ii)扩展的层间间距可以显着降低Delta G(H)的绝对值,从而大大促进了她的活动。另外,大量的1T相(73.9-79.2%)和Co-Mo-S活性位点(40.9-91.3%)也有助于增强她的合成样品的活性。总的来说,提出了一种简单的新策略,用于利用具有扩展层间间距的CO-MOS2的合成,其揭示了其他2D能量材料设计。

著录项

  • 来源
    《Advanced energy materials》 |2020年第20期|2000291.1-2000291.12|共12页
  • 作者单位

    Beijing Univ Technol Coll Environm & Energy Engn Beijing 100124 Peoples R China|Beijing Univ Chem Technol State Key Lab Chem Resource Engn Beijing 100029 Peoples R China;

    Beijing Univ Technol Coll Environm & Energy Engn Beijing 100124 Peoples R China;

    Beijing Univ Technol Coll Environm & Energy Engn Beijing 100124 Peoples R China;

    Beijing Univ Technol Coll Environm & Energy Engn Beijing 100124 Peoples R China;

    Beijing Univ Technol Coll Environm & Energy Engn Beijing 100124 Peoples R China;

    Beijing Univ Technol Coll Environm & Energy Engn Beijing 100124 Peoples R China;

    Beijing Univ Technol Coll Environm & Energy Engn Beijing 100124 Peoples R China;

    SINOPEC Dalian Res Inst Petr & Petrochem Dalian 116045 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Co-MoS2; DFT simulations; expanded interlayer spacings; H-2-direcing synthesis; hydrogen evolution reaction;

    机译:CO-MOS2;DFT模拟;扩展层间间距;H-2去除合成;氢进化反应;

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