首页> 外文期刊>Advanced energy materials >Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition
【24h】

Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition

机译:通过促进连续相变在N型SnSe晶体中实现高范围的平面外ZT

获取原文
获取原文并翻译 | 示例
           

著录项

  • 来源
    《Advanced energy materials》 |2019年第28期|1901334.1-1901334.10|共10页
  • 作者单位

    School of Materials Science and Engineering,Beihang University,Beijing,China;

    School of Materials Science and Engineering,Beihang University,Beijing,China;

    Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics,Southern University of Science and Technology,Shenzhen,China;

    School of Materials Science and Engineering,Beihang University,Beijing,China;

    Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai,China;

    College of Physics and Materials Science,Henan Normal University,Xinxiang,China;

    Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics,Southern University of Science and Technology,Shenzhen,China;

    School of Materials Science and Engineering,Beihang University,Beijing,China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    continuous phase transition; ntype SnSe crystals; power factor; thermal conductivity; thermoelectrics;

    机译:连续相变;NTYPE SNSE晶体;功率因数;导热系数;热电;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号