MOCVD GROWTH OF InP-RELATED MATERIALS USING TBA and TBP

摘要

High quality epitaxial layers of GaAs, InP, AlAs, InGaAs, InGaP, In-GaAlP have been grown by low-pressure metalorganic chemical vapor deposition using TMIn, TMGa, TMAl and the less hazardous group Ⅴ precursors, TBA, TBP. Excellent morphology was obtained for GaAs and InP in the temperature ranges of 570—650℃ and 520-650℃, respectively. The Ⅴ/Ⅲ ratio as low as 1.5 was used to grow epilayers of InP. The 77 K mobility of InGaAs lattice matched to InP (grown with TBA) was 72360 cm~2/(Vs) for n = 1.5 x 10~(15)/cm~(-3) and a thickness of 2 μm. Comparable photolumines-cence parameters of InGaP between layers grown with TBP and PH_3 were achieved, but for InGaAlP (TBP) photoluminescence intensity was significantly lower than for InGaAlP (PH_3). The promising results allow one to apply of TBA and TBP for developing of device structures.