ELECTRICAL CONDUCTIVITY AND THERMOELECTRIC POWER OF a-Se80-x Ga_20Te_X(x = 0, 5, 10, 15 AND 20)

摘要

The dc conductivity and thermoelectric power of a-Se_80-x Ga_20 Te_x (x = 0, 5, 10, 15 and 20) thin films were reported in the present work. The free charge carrier concentration was calculated with the help of dc conduc- tivity and thermoelectric power measurements. The calculated values of free charge carrier concentration were used to evaluate the free charge carrier mobility from which grain boundary potential was evaluated. The results are interpreted in terms of small polaron hopping, the structure of Se-Te and the grain boundary potential barrier.