4-times faster rising VPASS (10V), 15 lower power VPGM (20V), wide output voltage range voltage generator system for 4-times faster 3D-integrated solid-state drives
A wide output voltage, VOUT, range from 10V to 20V voltage generator system is proposed for the 3D-integrated NAND flash Solid-State Drives, SSDs. The circuits are fabricated with the smart mix and match of the 0.18um standard CMOS, the low voltage and high voltage NAND flash memory technologies. The two-stage boost converter is proposed for the program pass voltage, VPASS, in the lower VOUT, 10V, and the heavy load capacitance, COUT, condition. The measured rising time is four times shorter than the conventional single-stage boost converter [1,2]. In addition, the constant current boosting scheme is proposed for the program voltage, VPGM, in the higher VOUT, 20V, and the light COUT condition. The power consumption decreases by 15%. As a result, the SSD performance improves by 4 times.
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机译:提出了针对3D集成NAND闪存固态硬盘SSD的宽输出电压V OUT inf>,范围从10V至20V。这些电路采用0.18um标准CMOS的智能混合和匹配,低压和高压NAND闪存技术制造而成。提出了一种两级升压转换器,用于程序通过电压V PASS inf>(较低的V OUT inf>为10V)和重载电容C OUT inf>,条件。测量的上升时间比传统的单级升压转换器[1,2]短四倍。此外,针对程序电压V PGM inf>,更高的V OUT inf>,20V和光C OUT u,提出了恒定电流升压方案。 inf>条件。功耗降低了15%。结果,SSD性能提高了4倍。
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