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Temperature Dependence of Antiferromagnetic Interlayer Exchange Coupling in EuS-PbS Multilayers

机译:EuS-PbS多层膜中反铁磁层间交换耦合的温度依赖性

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摘要

Antiferromagnetic interlayer exchange coupling in semiconductor EuS-PbS-EuS ferromagnetic trilayers grown on PbS (001) substrates with ultrathin (0.6-1.2 nm) nonmagnetic PbS spacers is studied by SQUID mag-netometry and model calculations. Analysis of the experimentally observed magnetic field and temperature dependence of the magnetization of EuS-PbS structures reveals a rapid decrease in the interlayer coupling energy with increasing temperature indicating a temperature dependence of the microscopic coupling mechanism acting in these all-semiconductor ferromagnetic/ nonmagnetic multilayers.
机译:通过SQUID磁力测定法和模型计算研究了在具有超薄(0.6-1.2 nm)非磁性PbS隔离层的PbS(001)衬底上生长的半导体EuS-PbS-EuS铁磁三层中的反铁磁层间交换耦合。对实验观察到的EuS-PbS结构磁化强度的磁场和温度依赖性的分析表明,随着温度的升高,层间耦合能迅速降低,这表明作用于这些全半导体铁磁/非磁性多层膜中的微观耦合机制的温度依赖性。

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