A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

摘要

We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using SiO_2 and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and SiO_2. It is seen that the ideality factor (1.82) of the Al/p-Si/SiO_2/DNA/Ag diode is lower than that (3.31) of the Al/p-Si/SiO_2/Ag diode. This indicates that the electronic performance of DNA/Si junction was better than that of SiO_2/Si junction. The interface states of the Al/p-Si/SiO_2/DNA/Ag and Al/p-Si/SiO_2/Ag junctions were analyzed by conductance technique. The obtained D_(it) values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.