Growth and Structural Characterisation of V/Fe Multi layers

摘要

The (110) oriented V/Fe multilayers were prepared at room temperature using UHV magnetron sputtering. As a substrate we have used Si(100) wafers with an oxidised surface. The surface chemical composition and the cleanness of all layers was checked in situ, immediately after deposition, transferring the samples to an UHV analysis chamber equipped with X-ray photoelectron spectroscopy. The structure of the multilayers has been studied ex situ by low- and high-angle X-ray diffraction. The modulation wavelength was determined from the spacing between satellite peaks in the X-ray diffraction patterns. Results were consistent with the values obtained from total thickness divided by the number of repetitions. Growth of the Fe (V) on 1.6 nm V (Fe) underlayer was studied by succesive deposition and X-ray photoelectron spectroscopy measurements starting from 0.2 nm of Fe (V) layer, respectively. From the exponential variation of the X-ray photoelectron spectroscopy Fe 2p and V 2p integral intensities with increasing layer thickness we conclude that the Fe and V sublayers grow homogeneously in the planar mode.