FORMATION OF MISFIT DISLOCATIONS WITH IN-PLANE BURGERS VECTORS IN BORON DIFFUSED (111) SILICON

摘要

The study of different stages of boron diffusion by plan-view and cross-sectional transmission electron microscopy shows that, as in the classical model of Matthews, misfit dislocation half-loops are initially generated at the surface. The Burgers vector of the dislocation half-loop is inclined with respect to the surface and thus the initial misfit dislocations are not very efficient in strain relaxation. As the diffusion proceeds, non-parallel dislocations interact and give rise to product segments that have in-plane Burgers vectors parallel to the surface. Based on the observations, a model is presented to elucidate the details of these interactions and the formation of more efficient misfit dislocations from the less-efficient inclined ones.