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Thiophene Disubstituted Benzothiadiazole Derivatives: An Effective Planarization Strategy Toward Deep-Red to Near-Infrared (NIR) Organic Light-Emitting Diodes

机译:噻吩二取代的苯并噻二唑衍生物:一种向深红到近红外(NIR)有机发光二极管的有效平面化策略

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摘要

As one of the three primary colors that are indispensable in full-color displays, the development of red emitters is far behind the blue and green ones. Here, three novel orange-yellow to near-infrared (NIR) emitters based on 5,6-difluorobenzo[c][1,2,5]thiadiazole (BTDF) namely BTDF-TPA, BTDF-TTPA, and BTDF-TtTPA were designed and synthesized. Density functional theory analysis and photophysical characterization reveal that these three materials possess hybridized local and charge-transfer (HLCT) state feature and a feasible reverse intersystem crossing (RISC) from the high-lying triplet state to the singlet state may conduce to an exciton utilization exceeding the limit of 25% of traditional fluorescence materials under electrical excitation. The insertion of thiophene with small steric hindrance as π-bridge between the electron-donating (D) moiety triphenylamine (TPA) and the electron-accepting (A) moiety BTDF not only results in a remarkable 67 nm red-shift of the emission peak but also brings about a large overlap of frontier molecular orbitals to guarantee high radiative transition rate that is of great significance to obtain high photoluminescence quantum yield (PLQY) in the “energy-gap law” dominated long-wavelength emission region. Consequently, an attractive high maximum external quantum efficiency (EQE) of 5.75% was achieved for the doped devices based on these thiophene π-bridged emitters, giving a deep-red emission with small efficiency roll-off. Remarkably, NIR emission could be obtained for the non-doped devices, achieving an excellent maximum EQE of 1.44% and Commission Internationale de l'Éclairage (CIE) coordinates of (0.71, 0.29). These results are among the highest efficiencies in the reported deep-red to NIR fluorescent OLEDs and offer a new π-bridge design strategy in D-π-A and D-π-A-π-D red emitter design.
机译:作为全色显示器不可缺少的三种原色之一,红色发光体的发展远远落后于蓝色和绿色发光体。在此,基于5,6-二氟苯并[c] [1,2,5]噻二唑(BTDF)的三种新型橙黄色至近红外(NIR)发射体分别为BTDF-TPA,BTDF-TTPA和BTDF-TtTPA。设计和合成。密度泛函理论分析和光物理特征表明,这三种材料具有混合的局部和电荷转移(HLCT)状态特征,并且从高三重态到单重态的可行逆系统间穿越(RISC)可能有助于激子的利用在电激发下超过了传统荧光材料的25%的极限。在给电子(D)部分三苯胺(TPA)和电子接受(A)部分BTDF之间插入具有小的空间位阻的噻吩作为π桥,不仅导致发射峰出现明显的67 nm红移但也带来了前沿分子轨道的大量重叠,以确保高的辐射跃迁速率,这对于在“能隙定律”为主的长波发射区域中获得高的光致发光量子产率(PLQY)具有重要意义。因此,基于这些噻吩π桥式发射极的掺杂器件实现了5.75%的诱人高外部最大量子效率(EQE),从而产生了深红色发射且效率下降很小。值得注意的是,对于未掺杂的器件,可以获得NIR发射,实现了极好的最大EQE为1.44%,国际照明委员会(CIE)坐标为(0.71、0.29)。这些结果是报道的深红色至NIR荧光OLED效率最高的结果,并为D-π-A和D-π-A-π-D红色提供了新的π桥设计策略。发射器设计。

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