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Signal Enhancement of Silicon Nanowire Field-EffectTransistor Immunosensors by RNA Aptamer

机译:硅纳米线场效应的信号增强RNA适体的晶体管免疫传感器

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摘要

Silicon nanowire field-effect transistors (SiNW-FETs) have been demonstrated as a highly sensitive platform for label-free detection of a variety of biological and chemical entities. However, detecting signal from immunoassays by nano-FETs is severely hindered by the distribution of different charged groups of targeted entities, their binding orientation, and distances to the surface of the FET. Aptamers have been widely applied as a recognition element for plentiful biosensors because of small molecular sizes and moderate to high specific binding affinity with different types of molecules. In this study, we propose an effective approach to enhance the electrical responses of both direct (6×-histidine) and sandwich (amyloid β 1–42) immunoassays in SiNW-FETs with R18, a highly negative charged RNA aptamer against rabbit immunoglobulin G (IgG). Empirical results presented that the immunosensors targeted with R18 expressed a significantly stabilized and amplified signal compared to the ones without this aptamer. The research outcome provides applicability of the highlynegative charged aptamer as a bioamplifier for immunoassays by FETs.
机译:硅纳米线场效应晶体管(SiNW-FET)已被证明是一种高度敏感的平台,可用于多种生物和化学实体的无标记检测。但是,由于纳米粒子FET免疫检测信号的检测受到目标实体不同电荷基团的分布,它们的结合方向以及与FET表面的距离的严重阻碍。由于小分子尺寸以及与不同类型分子的中等至高特异性结合亲和力,适体已被广泛用作大量生物传感器的识别元件。在这项研究中,我们提出了一种有效的方法来增强具有R18的SiNW-FET中直接(6×-组氨酸)和三明治(淀粉样β1-42)免疫测定的电响应,R18是针对兔免疫球蛋白G的高度带负电荷的RNA适体(IgG)。实验结果表明,与没有这种适体的传感器相比,靶向R18的免疫传感器表达了明显稳定和放大的信号。研究成果提供了高度适用性带负电荷的适体作为FET免疫测定的生物放大器。

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