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Luminescence Change of CdS and CdSe Quantum Dots ona Ag Film

机译:CdS和CdSe量子点上的发光变化。银膜

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摘要

Enhanced luminescence of an emitter on a Ag film is usually ascribed to the resonant surface plasmons. In these studies, the solid cadmium sulfide (CdS) and cadmium selenide (CdSe) quantum dot/silver (QD/Ag) hybrids were prepared, and the luminescence characteristics of these QD/Ag hybrids were measured. It is found that the enhancement of the trap state emission (TSE) is related to the QD size. The TSE features of the annealed QD/Ag hybrids are insensitive to the morphology of the Ag film. We used the wet and dry methods to separate the QD and Ag components and found that the photoluminescence (PL) of the QD component was permanently changed from the initial state. The PL modification is ascribed to the Ag+ doping effect rather than the surface plasmons. This doping method uses pure Ag as the Ag+ ion source. In this case, though the CdS and CdSe QD/Ag hybrids are the solid state, the cation exchange between Ag+ and Cd2+ ions can still occur on the QD surface. Even a small amount of Ag can efficiently influence the luminescence of the QDs embedded in the poly(methyl methacrylate) matrix. A hypothetical model wasproposed to explain the PL modification of the QD/Ag hybrid with andwithout annealing. Using this dry method for doping, the transparentluminescence label can be prepared easily, and the doped QDs can befurther doped with Ag+ dopants.
机译:通常将银膜上发射极的发光增强归因于共振表面等离子体激元。在这些研究中,制备了固态硫化镉(CdS)和硒化镉(CdSe)量子点/银(QD / Ag)杂化物,并测量了这些QD / Ag杂化物的发光特性。发现陷阱态发射(TSE)的增强与QD尺寸有关。退火QD / Ag杂化物的TSE特征对Ag膜的形态不敏感。我们使用湿法和干法分离QD和Ag组分,发现QD组分的光致发光(PL)从初始状态永久改变。 PL修饰归因于Ag + 掺杂效应,而不是表面等离子体激元。这种掺杂方法使用纯银作为Ag + 离子源。在这种情况下,尽管CdS和CdSe QD / Ag杂化物为固态,但是Ag + 和Cd 2 + 离子之间的阳离子交换仍然可以在QD表面发生。即使少量的Ag也可以有效地影响嵌入在聚甲基丙烯酸甲酯基体中的QD的发光。假设模型是建议用和解释QD / Ag杂种的PL修饰无需退火。使用这种干法掺杂,透明发光标签易于制备,掺杂的量子点可以进一步掺杂了Ag + 掺杂剂。

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