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Gold-Nanoparticle-Deposited TiO2 Nanorod/Poly(Vinylidene Fluoride) Composites with Enhanced Dielectric Performance

机译:金纳米粒子沉积的TiO2纳米棒/聚(偏二氟乙烯)复合材料具有增强的介电性能

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摘要

Flexible dielectric polymer composites have been of great interest as embedded capacitor materials in the electronic industry. However, a polymer composite has a low relative dielectric permittivity (ε′ < 100), while its dielectric loss tangent is generally large (tanδ > 0.1). In this study, we fabricate a novel, high-permittivity polymer nanocomposite system with a low tanδ. The nanocomposite system comprises poly(vinylidene fluoride) (PVDF) co-filled with Au nanoparticles and semiconducting TiO2 nanorods (TNRs) that contain Ti3+ ions. To homogeneously disperse the conductive Au phase, the TNR surface was decorated with Au-NPs ~10–20 nm in size (Au-TNRs) using a modified Turkevich method. The polar β-PVDF phase was enhanced by the incorporation of the Au nanoparticles, partially contributing to the enhanced ε′ value. The introduction of the Au-TNRs in the PVDF matrix provided three-phase Au-TNR/PVDF nanocomposites with excellent dielectric properties (i.e., high ε′ ≈ 157 and low tanδ ≈ 0.05 at 1.8 vol% of Au and 47.4 vol% of TNRs). The ε′ of the three-phase Au-TNR/PVDF composite is ~2.4-times higher than that of the two-phase TNR/PVDF composite, clearly highlighting the primary contribution of the Au nanoparticles at similar filler loadings. The volume fraction dependence of ε′ is in close agreement with the effective medium percolation theory model. The significant enhancement in ε′ was primarily caused by interfacial polarization at the PVDF–conducting Au nanoparticle and PVDF–semiconducting TNR interfaces, as well as by the induced β-PVDF phase. A low tanδ was achieved due to the inhibited conducting pathway formed by direct Au nanoparticle contact.
机译:柔性介电聚合物复合材料具有很大的兴趣作为电子工业中的嵌入式电容器材料。然而,聚合物复合材料具有低的相对介电常数(ε'<100),而其介电损耗角正切通常是大值(tanδ> 0.1)。在这项研究中,我们制造具有低Tanδ的新型高介质聚合物纳米复合体系。纳米复合体系包含聚(偏二氟乙烯)(PVDF),其共填充有Au纳米颗粒和含有Ti3 +离子的半导体TiO 2纳米棒(TNR)。为了均匀地分散导电Au相,使用改进的TureTevich方法,TNR表面用Au-nPS〜10-20nm尺寸(Au-TNR)装饰。极性β-PVDF相通过在Au纳米颗粒的结合增强,以增强ε'值部分贡献。在PVDF基质中引入AU-TNRS提供了三相AU-TNR / PVDF纳米复合材料,具有优异的介电性质(即,高ε'≈157和低Tanδ≈05,在1.8Vol%的Au和47.4 Vol%TNRS )。三相的Au-TNR / PVDF复合材料的ε'是比上述两相TNR / PVDF复合的较高〜2.4倍,清楚地突出的Au纳米颗粒的在类似的填料填充量的主要贡献。 ε'的体积分数依赖性与有效培养的渗流理论模型密切一致。 ε'中的显着增强主要是由PVDF导电Au纳米颗粒和PVDF-半导体TNR界面的界面偏振引起的,以及诱导的β-PVDF相。由于通过直接Au纳米颗粒接触形成的抑制传导途径,实现了低Tanδ。

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