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Genetically engineered MAPT 10+16 mutation causes pathophysiological excitability of human iPSC-derived neurons related to 4R tau-induced dementia

机译:基因工程化MAPT 10 + 16突变导致人IPSC衍生的神经元的病理生理兴奋性与4R TAU诱导的痴呆相关

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摘要

A Left, DIC image of human iPSC-derived neuronal culture at ~190 DIV showing a patched neuron. Right, statistics of the resting membrane potential (Vrest) of iPSC-derived neurons in control (wild type, wt, tau) line at ~190 and 220 DIV. The two-tailed unpaired t-test indicated. B Statistics of the capacitance (Cm) of iPSC-derived neurons in the control (wt tau) group at different time points. Boxes show median values. Nonparametric Mann–Whitney test indicated. C Left, example of neuron responses (current mode) to a series of hyperpolarizing currents (top); lower panel shows how the membrane constant (τm) was measured. Dotted box, the area for calculating τm (red, linear fit). Right, statistics of the τm value in wt tau neurons at different time points. The two-tailed unpaired t-test indicated. D Same as in (B), but for the input resistance (Rin). The two-tailed unpaired t-test indicated. E Representative recording of changes in membrane potential of an iPSC-derived neuron in response to a hyperpolarizing current (indicated on the top) for the calculation of the voltage drop (Vdrop) and the sag ratio. F Statistical summary for the Vdrop (left) and the sag ratio (right) of control (wt tau) neurons at different time points. The two-tailed unpaired t-test indicated. All data are mean with s.e.m, unless indicated. The number of tested cells shown.
机译:在190 div的人IPSC衍生的神经元培养的左侧图像显示出贴膜神经元。对照(野生型,WT,TAU)管中IPSC衍生神经元的静息膜电位(VREEST)的统计数据〜190和220 div。双尾未配对的T检验表明。 B在不同时间点控制(WT TAU)中IPSC衍生神经元的电容(CM)的统计。盒子显示中位数。非参数曼诺 - 惠特尼测试表明。 C留下,神经元响应(电流模式)的示例到一系列超极化电流(顶部);下面的面板显示如何测量膜常数(τm)。虚线盒,计算τm的区域(红色,线性配合)。正确的,不同时间点WT TAU神经元τm值的统计。双尾未配对的T检验表明。 d与(b)相同,但用于输入电阻(rin)。双尾未配对的T检验表明。 E代表性地记录IPSC衍生神经元的膜电位变化响应于用于计算电压降(VDROP)和SAG比率的超积分电流(顶部指示)。双F统计摘要Vdrop时(左)和跌落率(右)控制的(重量TAU)的神经元在不同时间点。双尾未配对的T检验表明。除非表示,否则所有数据都是如下。所示测试单元的数量。

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