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Bias‐Polarity‐Dependent Direct and Inverted Marcus Charge Transport Affecting Rectification in a Redox‐Active Molecular Junction

机译:偏离极性依赖性和倒置的Marcus电荷转运影响氧化还原活性分子交界处的整流

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摘要

This paper describes the transition from the normal to inverted Marcus region in solid‐state tunnel junctions consisting of self‐assembled monolayers of benzotetrathiafulvalene (BTTF), and how this transition determines the performance of a molecular diode. Temperature‐dependent normalized differential conductance analyses indicate the participation of the HOMO (highest occupied molecular orbital) at large negative bias, which follows typical thermally activated hopping behavior associated with the normal Marcus regime. In contrast, hopping involving the HOMO dominates the mechanism of charge transport at positive bias, yet it is nearly activationless indicating the junction operates in the inverted Marcus region. Thus, within the same junction it is possible to switch between Marcus and inverted Marcus regimes by changing the bias polarity. Consequently, the current only decreases with decreasing temperature at negative bias when hopping is “frozen out,” but not at positive bias resulting in a 30‐fold increase in the molecular rectification efficiency. These results indicate that the charge transport in the inverted Marcus region is readily accessible in junctions with redox molecules in the weak coupling regime and control over different hopping regimes can be used to improve junction performance.
机译:本文介绍了由正状态隧道交叉点的正常到倒置马库区的过渡,其由苯并单层(BTTF)的自组装单层组成,以及该转变如何确定分子二极管的性能。温度依赖性归一化差分传导分析表明HOMO(最高占用的分子轨道)在大负偏差下的参与,其遵循与正常的MARCUS制度相关的典型的热激活跳跃行为。相比之下,涉及同性恋的跳跃主导了积极偏压的电荷传输机制,但它几乎活化,表明倒置马库斯地区的结算。因此,在相同的结中,可以通过改变偏置极性来在Marcus和反相Marcus制度之间切换。因此,当跳跃被“冷冻输出”时,电流仅随着负偏差的降低而降低,但不在正偏压下导致分子整流效率的30倍。这些结果表明,在弱耦合制度中的氧化还原分子中的结源中,倒置马库斯区域中的电荷传输易于可获得,并控制不同跳跃制度的控制可用于改善结性能。

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