a False-color scanning electron microscopy image of the device. b Structural diagram of the device cross section. The length and width of the Si nanoribbon were 18 and 2.75 μm, respectively. The electrode was Au. c Schematic of the hot carrier generation in the Si band diagram (left) and their dynamics in a Si nanoribbon (right). Electron–hole pairs were generated using laser irradiation on the left part and diffused from the hot region to the far end. The hollow blue circles and solid red dots represent holes and electrons, respectively. The red and blue lines represent diffusion of the electrons and holes, respectively. The color intensity of the electrons represents kinetic energy. The large gray solid dots are the projected Si atoms in the diamond crystal structure.
展开▼
机译：装置的假色扫描电子显微镜图像。 B器件横截面的B结构图。 Si纳米孔的长度和宽度分别为18和2.75μm。电极是au。 C SI频带图中的热载波（左）中的热载流子的C的示意图及其在SI nanlibbon（右）中的动态。使用左侧部分的激光照射产生电子 - 空穴对，并从热区域扩散到远端。空心蓝圆和固体红色点分别表示孔和电子。红色和蓝线分别表示电子和孔的扩散。电子的颜色强度代表动能。大灰色固体点是金刚石晶体结构中的投影Si原子。
展开▼
