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Multilayer graphene and carbon nanoribbon-based photodetectors: Fabrication and photoresponse measurement.

机译：多层石墨烯和碳纳米带基光电探测器：制作和光响应测量。

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作者
Sun, Rujie.;
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作者单位

The University of Utah.;

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授予单位 The University of Utah.;
学科 Materials science.;Condensed matter physics.;Electrical engineering.
学位 Ph.D.
年度 2013
页码 124 p.
总页数 124
原文格式 PDF
正文语种 eng
中图分类
关键词
入库时间 2022-08-17 11:41:29

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1. Effect of Stone-Wales defect on an armchair graphene nanoribbon-based photodetector [J] . Superlattices and microstructures . 2019,第Juna期

机译：Stone-Wales缺陷对扶手椅石墨烯纳米带基光电探测器的影响
2. Dual function armchair graphene nanoribbon-based spin-photodetector: Optical spin-valve and light helicity detector [J] . Ostovari Fatemeh, Moravvej-Farshi Mohammad Kazem Applied Physics Letters . 2014,第7期

机译：基于双功能扶手椅石墨烯纳米带的自旋光电探测器：光学自旋阀和光螺旋度探测器
3. Dual function armchair graphene nanoribbon-based spin-photodetector: Optical spin-valve and light helicity detector [J] . Fatemeh Ostovari, Mohammad Kazem Moravvej-Farshi Applied Physics Letters . 2014,第7期

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4. Broadband photoresponse of graphene photodetector from visible to long-wavelength infrared wavelengths [C] . Shinpei Ogawa, Masaaki Shimatani, Shoichiro Fukushima, SPIE Defense + Security Conference . 2018

机译：石墨烯光电探测器从可见光到长波长红外波长的宽带光响应
5. The fabrication, microstructural characterization, and internal photoresponse of platinum silicide/p-type silicon and iridium silicide/p-type silicon Schottky barrier photodetectors for infrared focal plane arrays [D] . Mercer, Douglas Edward 1990

机译：红外焦平面阵列用硅化铂/ p型硅和硅化铱/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应
6. Effect of Graphene Doping Level near the Metal Contact Region on Electrical and Photoresponse Characteristics of Graphene Photodetector [O] . Jaedong Jung, Honghwi Park, Heungsup Won, 2020

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7. Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection [O] . Jingxuan Wei, Ying Li, Lin Wang, 2020

机译：零偏置中红外石墨烯光电探测器，具有散装光响应和无校准偏振检测
8. Fabrication, Microstructural Characterization, and Internal Photoresponse ofPlatinum Silicide/P-Type Silicon and Iridium Silicide/P-Type Silicon Schottky Barrier Photodetectors for Infrared Focal Plane Arrays [R] . Mercer, D. E. 1991

机译：用于红外焦平面阵列的铂硅化物/ p型硅和铱硅化物/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应

Multilayer graphene and carbon nanoribbon-based photodetectors: Fabrication and photoresponse measurement.

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