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Morphology Tuning and Its Role in Optimization of Perovskite Films Fabricated from A Novel Nonhalide Lead Source

机译:形态学调整及其在新型非卤化物铅源制造的钙钛矿薄膜优化中的作用

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摘要

Usage of nonhalide lead sources for fabricating perovskite solar cells (PSCs) has recently attracted increasing attention as a promising route toward realizing high quality PSC devices. However, the unique role of nonhalide lead sources in improving perovskite film morphology and PSC performance has largely remained unexplored, impeding broader application of these materials. Here, it is demonstrated that by using a new nonhalide lead source, lead formate (Pb(HCOO)2), good control of perovskite film morphology can be achieved. With the usage of lead formate, PbI2 can nicely border the perovskite grain boundaries (GBs) and form domain “walls” that segregate the individual perovskite crystal domains. The PbI2 at the GBs lead to significant improvement in film quality and device performance through passivating the defects at the perovskite GBs and suppressing lateral carrier diffusion. An impressive carrier lifetime at the microsecond scale (τ2 = 1714 ns) is achieved, further with an optimal power conversion efficiency of 20.3% for the resulting devices. This work demonstrates a promising and effective method toward fabricating high‐quality perovskites and high‐efficiency PSCs.
机译:用于制造Perovskite太阳能电池(PSC)的非卤化物铅源的用途最近引起了越来越关注,作为实现高质量PSC器件的有希望的路线。然而,非卤化物铅源在改善Perovskite薄膜形态和PSC性能方面的独特作用在很大程度上仍未探测,妨碍了这些材料的更广泛的应用。这里,通过使用新的非卤化物铅源,铅甲酸铅(Pb(HCOO)2),可以实现良好的钙钛矿薄膜形态的控制。随着铅甲酸铅的使用,PBI2可以很好地覆盖钙钛矿晶界(GBS),形成域的“墙壁”,使单独的钙钛矿晶体畴隔离。 GBS的PBI2通过钝化钙钛矿GBS的缺陷和抑制横向载体扩散,导致膜质量和器件性能的显着改善。微秒刻度的令人印象深刻的载体寿命(τ实现2 = 1714 ns),进一步实现了所得装置的最佳功率转换效率为20.3%。这项工作展示了制造高质量钙耐力和高效PSC的有希望和有效的方法。

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