Memory devices have been advanced so much, but still it is highly required to find stable and reliable materials with low‐power consumption. Halide perovskites (HPs) have been recently adopted for memory application since they have advantages of fast switching based on ionic motion in crystal structure. However, HPs also suffer from poor stability, so it is necessary to improve the stability of HPs. In this regard, combined first‐principles screening and experimental verification are performed to design HPs that have high environmental stability and low‐operating voltage for memory devices. First‐principles screening identifies 2D layered AB X structure as the best candidate switching layer for memory devices, because it has lower formation energy and defect formation energy than 3D ABX or other layered structures (A B X , A BX ). To verify results, all‐inorganic 2D layered CsPb Br is synthesized and used in memory devices. The memory devices that use CsPb Br show much better stability and lower operating voltages than devices that use CsPbBr . These findings are expected to provide new opportunity to design materials for reliable device applications based on calculation, screening, and experimental verification.
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机译:内存设备如此先进,但仍然非常需要找到具有低功耗的稳定可靠的材料。最近用于记忆施用的卤化卤素(HPS),因为它们具有基于晶体结构中的离子运动的快速切换的优点。然而,HPS也存在稳定性差,因此有必要提高HPS的稳定性。在这方面,进行组合的第一原理筛选和实验验证以设计具有高环境稳定性和用于存储器件的低工作电压的HPS。第一原理筛选将2D分层AB X结构识别为存储器件的最佳候选开关层,因为它具有比3D ABX或其他分层结构更低的形成能量和缺陷形成能量(A B X,A BX)。为了验证结果,全型2D层叠CSPB BR合成并用于存储器设备。使用CSPB BR的存储器设备比使用CSPBBR的设备显示出更好的稳定性和更低的工作电压。这些调查结果预计将基于计算,筛选和实验验证为可靠的设备应用设计材料提供新的机会。
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