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Optical Etching to Pattern Microstructures on Plastics by Vacuum Ultraviolet Light

机译:光学蚀刻通过真空紫外光在塑料上形成图案

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摘要

We proposed and demonstrated an optical dry etching method for transferring a pattern on a photomask to a surface of plastics by decomposing the irradiated area using the high energy of vacuum ultraviolet light (VUV) at room temperature and pressure. Two kinds of wavelengths of 160 nm and 172 nm were used as the vacuum ultraviolet light, and the patterning performances for polymethyl methacrylate (PMMA) and polycarbonate (PC) were compared. As a result, it was revealed that proportional relationships were obtained between the etching rate and the irradiation dose for both wavelengths, and the cross-sectional profiles were anisotropic. In addition, both PMMA and PC were etched at a wavelength of 160 nm, whereas PC could not be etched at a wavelength of 172 nm, suggesting that it correlates with the bond dissociation energies of the molecular bonds of the materials and the energies of the photons. Furthermore, by combining this method with the optical bonding method that we had previously developed to bond surfaces irradiated with VUV, we have demonstrated a method for fabricating microfluidic devices by irradiating only with VUV. This paper shows that this technique is a new microfabrication method suitable for simple and mass production of plastic materials.
机译:我们提出并证明了一种光学干法刻蚀方法,该方法是通过在室温和压力下利用真空紫外光(VUV)的高能量分解照射区域,从而将光掩模上的图案转移到塑料表面。将两种波长分别为160 nm和172 nm用作真空紫外光,并比较了聚甲基丙烯酸甲酯(PMMA)和聚碳酸酯(PC)的图案形成性能。结果表明,对于两种波长,在蚀刻速率和照射剂量之间都获得了比例关系,并且截面轮廓是各向异性的。另外,PMMA和PC都在160 nm的波长下被蚀刻,而PC在172 nm的波长下不能被蚀刻,这表明它与材料的分子键的键解离能和材料的能相关。光子。此外,通过将该方法与我们先前开发的用于粘合VUV照射的表面的光学粘合方法相结合,我们展示了一种仅通过VUV辐照制造微流体器件的方法。本文表明该技术是一种适用于简单,批量生产塑料材料的新型微细加工方法。

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