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Improved adsorption and degradation performance by S-doping of (001)-TiO2

机译:通过S掺杂(001)-TiO2改善吸附和降解性能

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摘要

In this work, sulfur-doped (S-doped) TiO with the (001) face exposed was synthesized by thermal chemical vapor deposition at 180 or 250 °C using S/Ti molar ratios of 0, 0.5, 1, 2, 3, 4 and 5. The S-doped samples synthesized at 250 °C exhibit a significantly improved photocatalytic performance. More precisely, S-doping has the following effects on the material: (1) S can adopt different chemical states in the samples. Specifically, it exists in the form of S replacing O at a ratio of = 1 and also in the form of S replacing Ti at ≥ 2. As a result, S-doping causes a lattice distortion, because the ionic radii of S and S differ from that of the O and Ti ions. (2) S-doping increases the adsorption coefficient for methylene blue (MB) from 0.9% to 68.5% due to the synergistic effects of the oxygen vacancies, increased number of surface chemical adsorption centers as a result of SO adsorption on the TiO surface and the larger pore size. (3) S-doping increases the MB degradation rate from 6.9 × 10 min to 18.2 × 10 min due to an increase in the amount of •OH and •O radicals.
机译:在这项工作中,使用S / Ti摩尔比在180或250°C下通过热化学气相沉积法合成了露出(001)面的硫掺杂(S掺杂)TiO。 分别为0、0.5、1、2、3、4和5。在250°C合成的S掺杂样品显示出显着改善的光催化性能。更准确地说,S掺杂对材料具有以下影响:(1)S可以在样品中采用不同的化学态。具体而言,以S取代O的形式存在 = 1并以S的形式代替Ti ≥2。结果,由于S和S的离子半径不同于O和Ti离子的半径,S掺杂会导致晶格畸变。 (2)S掺杂增加吸附系数 氧空位的协同作用,使亚甲基蓝(MB)的含量从0.9%增至68.5%,SO导致表面化学吸附中心数量增加 吸附在TiO表面上且孔径较大。 (3)由于•OH和•O自由基的数量增加,S掺杂将MB降解速率从6.9×10分钟增加到18.2×10分钟。

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