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Temperature dependence of electric-field-induced domain switching in 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 single crystal

机译:电场诱导的域切换温度依赖性在0.7pb(mg1 / 3nb2 / 3)o3-0.3pbtio3单晶

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摘要

The influence of temperature on electric-field-induced domain switching of [0 0 1]c oriented 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–0.3PT) single crystal has been studied. The piezoelectric properties of PMN–0.3PT single crystal change drastically at one critical field at 30 °C and two critical fields at 90 °C corresponding to electric-field-induced domain switching. The domain structures were studied by polarizing light microscopy on the [100]c surface under the electric field applied along [001]c direction. The PMN–0.3PT single crystal exhibits a rapid increase in piezoresponse at 100 V/mm, which is related to R–MA phase transformation. At 90°C, the M and T0 0 1 phases coexist at 100 V/mm, while T001 mono-domain appears at 300 V/mm. The domain switching process here can be identified as (T100 or T010) → M → T001. The experimental results show that the phase state and domain structures of the crystal are closely related to the piezoelectric behaviors.
机译:研究了温度对0.7pb(Mg1 / 3nb2 / 3)O 3 -0.3pbtiO3(PMN-0.3PT)单晶的电场诱导的电场诱导域切换的影响。 PMN-0.3PT的压电性能在30°C和两个临界场的一个临界场上大致在90℃的临界场上,对应于电场诱导的畴切换。通过在沿着[001] C方向施加的电场下的[100] C表面上的光学光学显微镜通过光学光学显微镜进行研究。 PMN-0.3pt单晶在100V / mm处表现出压电响应的快速增加,与R-MA相变相关。在90°C时,M和T0 0 1相位在100V / mm时共存,而T001单域显示为300 V / mm。这里的域切换过程可以识别为(t100或t010)→m→t001。实验结果表明,晶体的相状态和畴结构与压电行为密切相关。

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