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Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

机译:能量色散CdTe和CdZnTe检测器用于频谱临床CT和NDT应用

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摘要

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.
机译:我们正在开发室温复合半导体探测器,用于能量分辨高通量单X射线光子计数光谱计算机断层扫描(CT),包括用于医疗应用的具有纳米粒子造影剂的功能成像和用于安全性的无损检测(NDT)应用程序。能量分解光子计数可通过针对CT中的特定成像任务的最佳能量加权,通过CT中的金属纳米粒子的光谱成像增强功能对比,以及通过CT和NDT中的多基函数材料分解进行成分分析,从而减少患者剂量。这些应用程序通过传送给检测器的X射线发生器产生高输入计数率。因此,为了在这些应用中实现能量分辨的单光子计数,必须在所需的空间分辨率和应用的动态范围内实现能量分散检测器的高输出计数率(OCR)。必须在应用程序具有足够的视场(FOV)的情况下获得所需的OCR,空间分辨率和动态范围的性能,因此需要像素阵列和扫描技术的拼接。室温碲化镉(CdTe)和碲化镉锌(CdZnTe)复合半导体,作为直接转换X射线传感器运行,当连接到以多个固定阈值在快速峰值时间运行的专用集成电路(ASIC)时,可以提供所需的速度如果传感器设计用于在所需的能量和空间分辨率以及足够高的检测量子效率(DQE)的情况下,在应用程序的X射线能量范围内快速形成信号,则每个像素都可以。我们已经开发出高通量能量分辨光子计数X射线成像阵列传感器,该传感器使用针对临床CT和安全NDT优化的像素化CdTe和CdZnTe半导体。我们还制造了具有二维(2D)输入阵列的高通量ASIC,用于从传感器读出。传感器没有保护环,并具有2D像素阵列,可以在保持像素间距的同时以2D像素平铺。 2D ASIC具有四个能量仓,它们具有足够的动态范围内的线性能量响应,可用于临床CT和某些NDT应用。 ASIC也可以2D拼接,并设计为适合传感器的有效区域。我们已经测量了几个重要的性能参数,包括:输出计数率(OCR)超过每秒每平方毫米2000万个计数,并且由于脉冲堆积而导致的计数损失最小,在整个动态范围内的能量分辨率为半最大值全幅7 keV(FWHM) ,并且本底噪声约为20keV。这是通过将ASIC输入直接互连到CdZnTe传感器的像素而实现的,从而导致ASIC的输入电容很小。我们介绍了CdTe和CdZnTe传感器的性能测量,包括OCR,FWHM能量分辨率,本底噪声,以及在CT和NDT应用中期望的快速变化的高通量下的时间稳定性和均匀性。

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