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Realistic modeling of deep brain stimulation implants for electromagnetic MRI safety studies

机译:用于电磁MRI安全性研究的深部脑刺激植入物的真实模型

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摘要

We propose a framework for electromagnetic (EM) simulation of deep brain stimulation (DBS) patients in radiofrequency (RF) coils. We generated a model of a DBS patient using post-operative head and neck computed tomography (CT) images stitched together into a “virtual CT” image covering the entire length of the implant. The body was modeled as homogeneous. The implant path extracted from the CT data contained self-intersections, which we corrected automatically using an optimization procedure. Using the CT-derived DBS path, we built a model of the implant including electrodes, helicoidal internal conductor wires, loops, extension cables, and the implanted pulse generator. We also built four simplified models with straight wires, no extension cables and no loops to assess the impact of these simplifications on safety predictions. We simulated EM fields induced by the RF birdcage body coil in the body model, including at the DBS lead tip at both 1.5 Tesla (64 MHz) and 3 Tesla (123 MHz). We also assessed the robustness of our simulation results by systematically varying the EM properties of the body model and the position and length of the DBS implant (sensitivity analysis). The topology correction algorithm corrected all self-intersection and curvature violations of the initial path while introducing minimal deformations (open-source code available at ). The unaveraged lead-tip peak SAR predicted by the five DBS models (0.1 mm resolution grid) ranged from 12.8 kW/kg (full model, helicoidal conductors) to 43.6 kW/kg (no loops, straight conductors)at 1.5 T (3.4-fold variation) and 18.6 kW/kg (full model, straight conductors) to 73.8 kW/kg (no loops, straight conductors)at 3 T (4.0-fold variation). At 1.5 T and 3 T, the variability of lead-tip peak SAR with respect to the conductivity ranged between 18% and 30%. Variability with respect to the position and length of the DBS implant ranged between 9.5% and 27.6%.
机译:我们为射频(RF)线圈中的深部脑刺激(DBS)患者的电磁(EM)模拟提出了一个框架。我们使用缝合后的头部和颈部CT图像生成了一个DBS患者模型,该图像被缝合成覆盖整个植入物长度的“虚拟CT”图像。该实体被建模为均质。从CT数据中提取的植入物路径包含自相交,我们使用优化程序对其进行了自动校正。使用CT衍生的DBS路径,我们建立了植入物的模型,包括电极,螺旋形内部导线,环,延长电缆和植入的脉冲发生器。我们还构建了四个简化的模型,这些模型具有直导线,没有延长电缆和没有回路,以评估这些简化对安全性预测的影响。我们在人体模型中模拟了RF鸟笼式人体线圈感应的EM场,包括在1.5 Tesla(64 MHz)和3 Tesla(123 MHz)的DBS引线尖端。我们还通过系统地改变人体模型的EM特性以及DBS植入物的位置和长度(敏感性分析)来评估仿真结果的鲁棒性。拓扑校正算法校正了初始路径的所有自交点和曲率违规,同时引入了最小的变形(可在参考资料中找到开放源代码)。五个DBS模型(0.1 mm分辨率网格)预测的非平均铅尖峰值SAR在1.5 T(3.4-)时从12.8 kW / kg(完整模型,螺旋导体)到43.6 kW / kg(无回路,直导体)。倍率变化)和3 T(4.0倍变化)下的18.6 kW / kg(完整型号,直导体)至73.8 kW / kg(无回路,直导体)。在1.5 T和3 T时,铅尖峰SAR相对于电导率的变化范围为18%至30%。 DBS植入物的位置和长度方面的差异在9.5%和27.6%之间。

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