首页> 外文会议>Annual International Conference of the IEEE Engineering in Medicine and Biology Society >RF heating of deep brain stimulation implants during MRI in 1.2 T vertical scanners versus 1.5 T horizontal systems: A simulation study with realistic lead configurations
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RF heating of deep brain stimulation implants during MRI in 1.2 T vertical scanners versus 1.5 T horizontal systems: A simulation study with realistic lead configurations

机译:在1.2 T垂直扫描仪与1.5 T水平系统中进行MRI期间深部脑刺激植入物的RF加热:具有真实引线配置的仿真研究

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Patients with deep brain stimulation (DBS) implants are often denied access to magnetic resonance imaging (MRI) due to safety concerns associated with RF heating of implants. Although MR-conditional DBS devices are available, complying with manufacturer guidelines has proved to be difficult as pulse sequences that optimally visualize DBS target structures tend to have much higher specific absorption rate (SAR) of radiofrequency energy than current guidelines allow. The MR-labeling of DBS devices, as well as the majority of studies on RF heating of conductive implants have been limited to horizontal close-bore MRI scanners. Vertical MRI scanners, originally introduced as open low-field MRI systems, are now available at 1.2 T field strength, capable of high-resolution structural and functional imaging. No literature exists on DBS SAR in this class of scanners which have a 90° rotated transmit coil and thus, generate a fundamentally different electric and magnetic field distributions. Here we present a simulation study of RF heating in a cohort of forty patient-derived DBS lead models during MRI in a commercially available vertical openbore MRI system (1.2 T OASIS, Hitachi) and a standard horizontal 1.5 T birdcage coil. Simulations were performed at two major imaging landmarks representing head and chest imaging. We calculated the maximum of 0.1g-averaged SAR (0.1g-SARMax) around DBS lead tips when a B1+ = 4 µT was generated on an axial plane passing through patients body. For head landmark, 0.1g-SARMax reached 220±188 W/kg in the 1.5 T birdcage coil, but only 14±11 W/kg in the OASIS coil. For chest landmark, 0.1g-SARMax was 24±17 W/kg in the 1.5 T birdcage coil and 3±2 W/kg in the OASIS coil. A paired two-tail t-test revealed a significant reduction in SAR with a large effect-size during head MRI (p < 1.5×10-8, Cohen’s d = 1.5) as well as chest MRI (p < 6.5×10-10, Cohen’s d = 1.7) in 1.2 T Hitachi OASIS coil compared to a standard 1.5 T birdcage transmitter. Our findings suggest that open-bore vertical scanners may offer an untapped opportunity for MRI of patients with DBS implants.
机译:由于与植入物的RF加热相关的安全问题,经常会拒绝使用深部脑刺激(DBS)植入物的患者进行磁共振成像(MRI)。尽管有MR条件的DBS设备可用,但已证明很难遵守制造商的指南,因为最佳可视化DBS目标结构的脉冲序列往往比当前指南所允许的射频能量具有更高的比吸收率(SAR)。 DBS设备的MR标记以及对导电植入物的RF加热的大多数研究仅限于水平闭孔MRI扫描仪。垂直MRI扫描仪最初是作为开放式低场MRI系统引入的,现在可提供1.2 T的场强,能够进行高分辨率的结构和功能成像。在此类扫描仪中,没有关于DBS SAR的文献,它们具有90°旋转的发射线圈,因此产生根本不同的电场和磁场分布。在这里,我们介绍了在市售的垂直开孔MRI系统(1.2 T OASIS,日立)和标准水平1.5 T鸟笼线圈中进行MRI期间,对40个患者衍生的DBS导线模型中的RF加热进行的模拟研究。在代表头部和胸部成像的两个主要成像界标上进行了仿真。我们计算了平均0.1g SAR的最大值(0.1g-SAR Max )围绕DBS线索提示时,B 1 + 在穿过患者身体的轴向平面上产生了= 4 µT。对于头标,0.1g-SAR Max 1.5 T鸟笼线圈达到220±188 W / kg,而OASIS线圈仅为14±11 W / kg。胸部标志物,0.1g-SAR Max 在1.5 T鸟笼线圈中为24±17 W / kg,在OASIS线圈中为3±2 W / kg。配对的双尾t检验显示,头部MRI期间SAR显着降低,且效应大小大(p <1.5×10 -8 ,科恩(Cohen)d = 1.5)和胸部MRI(p <6.5×10 -10 ,科恩(Cohen)的d = 1.7)与标准的1.5 T鸟笼发射器相比,采用1.2 T日立OASIS线圈。我们的研究结果表明,开孔垂直扫描仪可能为DBS植入物患者的MRI提供未开发的机会。

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