首页> 美国卫生研究院文献>other >Stimulation and Artifact-suppression Techniques for in-vitro High-density Microelectrode Array Systems
【2h】

Stimulation and Artifact-suppression Techniques for in-vitro High-density Microelectrode Array Systems

机译:体外高密度微电极阵列系统的刺激和伪影抑制技术

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

We present novel voltage stimulation buffers with controlled output current, along with recording circuits featuring adjustable high-pass cut-off filtering to perform efficient stimulation while actively suppressing stimulation artifacts in high-density microelectrode arrays. Owing to the dense packing and close proximity of the electrodes in such systems, a stimulation through one electrode can cause large electrical artifacts on neighboring electrodes that easily saturate the corresponding recording amplifiers. To suppress such artifacts, the high-pass corner frequencies of all available 2048 recording channels can be raised from several Hz to several kHz by applying a “soft-reset” or pole-shifting technique. With the implemented artifact suppression technique, the saturation time of the recording circuits, connected to electrodes in immediate vicinity to the stimulation site, could be reduced to less than 150 μs. For the stimulation buffer, we developed a circuit, which can operate in two modes: either control of only the stimulation voltage, or control of current and voltage during stimulation. The voltage-only controlled mode employs a local common-mode feedback operational transconductance amplifier with a near rail-to-rail input/output range, suitable for driving high capacitive loads. The current/voltage controlled mode is based on a positive current conveyor generating adjustable output currents, while its upper and lower output voltages are limited by two feedback loops. The current/voltage controlled circuit can generate stimulation pulses up to 30 μA with less than ±0.1% linearity error in the low-current mode, and up to 300 μA with less than ±0.2% linearity error in the high-current mode.
机译:我们提出了具有可控输出电流的新型电压刺激缓冲器,以及具有可调高通截止滤波功能的记录电路,以执行有效刺激,同时积极抑制高密度微电极阵列中的刺激伪像。由于在这样的系统中电极的密集堆积和紧密接近,通过一个电极的刺激会在相邻电极上引起大的电伪像,从而容易使相应的记录放大器饱和。为了抑制这种伪影,可以通过应用“软复位”或极移技术将所有可用的2048个记录通道的高通转折频率从几个Hz升高到几个kHz。利用实施的伪影抑制技术,可以将连接到紧邻刺激部位的电极的记录电路的饱和时间缩短至小于150μs。对于刺激缓冲液,我们开发了一种电路,该电路可以两种模式工作:要么仅控制刺激电压,要么控制刺激过程中的电流和电压。仅电压控制模式采用本地共模反馈运算跨导放大器,具有接近轨至轨的输入/输出范围,适用于驱动高容性负载。电流/电压控制模式基于产生可调节输出电流的正电流传送器,而其上,下输出电压则受两个反馈环路的限制。电流/电压控制电路在低电流模式下可产生高达30μA的线性误差,线性误差小于±0.1%;在大电流模式下,可产生高达300μA的激励脉冲,线性误差小于±0.2%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号